Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide
Journal article, 2017

The two-dimensional (2D) semiconductor molybdenum disulfide (MoS2) has attracted widespread attention for its extraordinary electrical-, optical-, spin-, and valley-related properties. Here, we report on spin-polarized tunneling through chemical vapor deposited multilayer MoS2 (∼7 nm) at room temperature in a vertically fabricated spin-valve device. A tunnel magnetoresistance (TMR) of 0.5–2% has been observed, corresponding to spin polarization of 5–10% in the measured temperature range of 300–75 K. First-principles calculations for ideal junctions result in a TMR up to 8% and a spin polarization of 26%. The detailed measurements at different temperature, bias voltages, and density functional theory calculations provide information about spin transport mechanisms in vertical multilayer MoS2 spin-valve devices. These findings form a platform for exploring spin functionalities in 2D semiconductors and understanding the basic phenomena that control their performance.

density functional theory

spin-polarized tunneling

2D semiconductor

multilayer MoS2

tunnel magnetoresistance


André Dankert

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Parham Pashaei

Chalmers, Microtechnology and Nanoscience (MC2)

Venkata Kamalakar Mutta

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

A.P.S. Gaur

University of Puerto Rico

Iowa State University

S. Sahoo

University of Puerto Rico

Institute of Physics Bhubaneswar

I. Rungger

National Physical Laboratory (NPL)

A. Narayan

Swiss Federal Institute of Technology in Zürich (ETH)

Trinity College Dublin

K. Dolui

University of Delaware

Trinity College Dublin

Anamul Md Hoque

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

R.S. Patel

Birla Institute of Technology and Science Pilani

M.P. De Jong

MESA Institute for Nanotechnology

R.S. Katiyar

University of Puerto Rico

S. Sanvito

Trinity College Dublin

Saroj Prasad Dash

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

ACS Nano

1936-0851 (ISSN) 1936-086X (eISSN)

Vol. 11 6 6389-6395

Graphene-Based Revolutions in ICT And Beyond (Graphene Flagship)

European Commission (EC) (EC/FP7/604391), 2013-10-01 -- 2016-03-31.

Areas of Advance

Nanoscience and Nanotechnology (SO 2010-2017, EI 2018-)

Materials Science


Basic sciences

Subject Categories

Nano Technology

Condensed Matter Physics


Chalmers Materials Analysis Laboratory

Nanofabrication Laboratory



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4/6/2022 7