André Dankert

Doktor at Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

André Dankert is currently a postdoctoral researcher in the nanoelectronics and spintronics research group of Prof. Saroj P. Dash. André Dankert worked for almost 10 years in several research areas of condensed matter and solid state physics. During his studies in physics in Dresden (Germany) he worked 5 years as a student researcher in a high magnetic field facility investigating novel material properties under extreme conditions. He is also engaged in several academic and industrial collaborations combining research and programming by developing measurement setups and software solutions. Since he started his doctoral studies at Chalmers University of Technology in 2011, he investigates the electronic and spintronic properties of graphene and other two-dimensional materials, such as semiconducting layered materials, topological insulators and their heterostructures. He defended his doctoral thesis successfully in February 2015.

Source: chalmers.se

Projects

2013–2016

Silicon Spintronics at Room Temperature

Saroj Prasad Dash Quantum Device Physics
Venkata Kamalakar Mutta Quantum Device Physics
André Dankert Quantum Device Physics
Swedish Research Council (VR)

2012–2016

Silicon Spintronics at Room Temperature (SILICONSPIN)

Saroj Prasad Dash Quantum Device Physics
Venkata Kamalakar Mutta Quantum Device Physics
André Dankert Quantum Device Physics
European Commission (FP7)

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Publications

2017

Gate-tunable Hall sensors on large area CVD graphene protected by h-BN with 1D edge contacts

André Dankert, Saroj Prasad Dash, Bogdan Karpiak
Journal of Applied Physics. Vol. 122 (5), p. Article no 054506 -
Journal article
2017

Spintronics with Graphene and van der Waals Heterostructures

Saroj Prasad Dash, Venkata Kamalakar Mutta, André Dankert
World Scientific, p. 241-258
Chapter in monograph, book - popular science
2017

Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide

M.A. Hoque, André Dankert, Saroj Prasad Dash et al
ACS Nano. Vol. 11 (6), p. 6389-6395
Journal article
2017

Electrical gate control of spin current in van der Waals heterostructures at room temperature

Saroj Prasad Dash, André Dankert
Nature Communications. Vol. 8, p. Article no 16093 -
Journal article
2016

Inversion of Spin Signal and Spin Filtering in Ferromagnet| Hexagonal Boron Nitride-Graphene van der Waals Heterostructures

Venkata Kamalakar Mutta, Paul Kelly, André Dankert et al
Scientific Reports. Vol. 6, p. 21168-
Journal article
2015

Effect of high-k dielectric and ionic liquid gate on nanolayer black-phosphorus field effect transistors

B. N. Madhushankar, Saroj Prasad Dash, Venkata Kamalakar Mutta et al
Applied Physics Letters. Vol. 107 (11), p. 113103-
Journal article
2015

Low Schottky Barrier Black Phosphorus Field-Effect Devices with Ferromagnetic Tunnel Contacts

B. N. Madhushankar, André Dankert, Venkata Kamalakar Mutta et al
Small. Vol. 11 (18), p. 2209-2216
Journal article
2015

Room Temperature Electrical Detection of Spin Polarized Currents in Topological Insulators

Sophie Charpentier, Johannes Geurs, Venkata Kamalakar Mutta et al
Nano Letters. Vol. 15 (12), p. 7976-7981
Journal article
2015

Tunnel Magnetoresistance with Atomically Thin Two‚ÄźDimensional Hexagonal Boron Nitride Barriers

Abdul Wajid, Ram Shanker Patel, Venkata Kamalakar Mutta et al
Nano Research. Vol. 8 (4), p. 1357-1364
Journal article
2015

Long distance spin communication in chemical vapour deposited graphene

André Dankert, Saroj Prasad Dash, Venkata Kamalakar Mutta et al
Nature Communications. Vol. 6, p. 6766-
Journal article
2014

Spin transport and precession in graphene measured by nonlocal and three-terminal methods

Johan Bergsten, Saroj Prasad Dash, Venkata Kamalakar Mutta et al
Applied Physics Letters. Vol. 104 (19), p. 192403 -
Journal article
2014

Electric field effects on spin accumulation in Nb-doped SrTiO3 using tunable spin injection contacts at room temperature

André Dankert, André Dankert, Saroj Prasad Dash et al
Applied Physics Letters. Vol. 104 (21)
Journal article
2014

Spintronics with graphene-hexagonal boron nitride van der Waals heterostructures

Saroj Prasad Dash, Venkata Kamalakar Mutta, Johan Bergsten et al
Applied Physics Letters. Vol. 105 (212405)
Journal article
2014

High Performance Molybdenum Disulfide Field Effect Transistors with Spin Tunnel Contacts

Lennart Langouche, Venkata Kamalakar Mutta, Saroj Prasad Dash et al
ACS Nano. Vol. 8 (1), p. 476-482
Journal article
2014

Enhanced Tunnel Spin Injection into Graphene using Chemical Vapor Deposited Hexagonal Boron Nitride

Venkata Kamalakar Mutta, Tommy Ive, Saroj Prasad Dash et al
Scientific Reports. Vol. 4, p. Art. no. 6146-
Journal article
2013

Thermal creation of electron spin polarization in n-type silicon

Saroj Prasad Dash, André Dankert
Applied Physics Letters. Vol. 103 (24), p. article nr. 242405-
Journal article
2013

Efficient Spin Injection into Silicon and the Role of the Schottky Barrier

André Dankert, Dulal Ravi Sharma, Saroj Prasad Dash
Scientific Reports. Vol. 3
Journal article