Inversion of Spin Signal and Spin Filtering in Ferromagnet| Hexagonal Boron Nitride-Graphene van der Waals Heterostructures
Journal article, 2016

Two dimensional atomically thin crystals of graphene and its insulating isomorph hexagonal boron nitride (h-BN) are promising materials for spintronic applications. While graphene is an ideal medium for long distance spin transport, h-BN is an insulating tunnel barrier that has potential for efficient spin polarized tunneling from ferromagnets. Here, we demonstrate the spin filtering effect in cobalt|few layer h-BN|graphene junctions leading to a large negative spin polarization in graphene at room temperature. Through nonlocal pure spin transport and Hanle precession measurements performed on devices with different interface barrier conditions, we associate the negative spin polarization with high resistance few layer h-BN|ferromagnet contacts. Detailed bias and gate dependent measurements reinforce the robustness of the effect in our devices. These spintronic effects in two-dimensional van der Waals heterostructures hold promise for future spin based logic and memory applications.

Author

Venkata Kamalakar Mutta

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

André Dankert

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Paul Kelly

University of Twente

Saroj Prasad Dash

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Scientific Reports

2045-2322 (ISSN)

Vol. 6 21168- 21168

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (2010-2017)

Materials Science

Subject Categories

Physical Sciences

Nano Technology

Roots

Basic sciences

DOI

10.1038/srep21168

More information

Latest update

6/8/2018 5