All-2D CVD-grown semiconductor field-effect transistors with van der Waals graphene contacts
Artikel i vetenskaplig tidskrift, 2024
Two-dimensional (2D) semiconductors and van der Waals (vdW) heterostructures with graphene have generated enormous interest for future electronic, optoelectronic, and energy-harvesting applications. The electronic transport properties and correlations of such hybrid devices strongly depend on the quality of the materials via chemical vapor deposition (CVD) process, their interfaces and contact properties. However, detailed electronic transport and correlation properties of the 2D semiconductor field-effect transistor (FET) with vdW graphene contacts for understanding mobility limiting factors and metal-insulator transition properties are not explored. Here, we investigate electronic transport in scalable all-2D CVD-grown molybdenum disulfide (MoS2) FET with graphene contacts. The Fermi level of graphene can be readily tuned by a gate voltage to enable a nearly perfect band alignment and, hence, a reduced and tunable Schottky barrier at the contact with good field-effect channel mobility. Detailed temperature-dependent transport measurements show dominant phonon/impurity scattering as a mobility limiting mechanisms and a gate-and bias-induced metal-insulator transition in different temperature ranges, which is explained in light of the variable-range hopping transport. These studies in such scalable all-2D semiconductor heterostructure FETs will be useful for future electronic and optoelectronic devices for a broad range of applications.
Författare
Anamul Md Hoque
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Antony George
Friedrich-Schiller-Universität Jena
Vasudev Ramachandra
Chalmers, Mikroteknologi och nanovetenskap
Emad Najafidehaghani
Friedrich-Schiller-Universität Jena
Ziyang Gan
Friedrich-Schiller-Universität Jena
Richa Mitra
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Bing Zhao
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
S. Sahoo
Institute of Physics Bhubaneswar
Homi Bhabha National Institute (HBNI)
Maria Abrahamsson
Chalmers, Kemi och kemiteknik, Kemi och biokemi
Qiuhua Liang
Chalmers, Fysik, Kondenserad materie- och materialteori
Julia Wiktor
Chalmers, Fysik, Kondenserad materie- och materialteori
Andrey Turchanin
Friedrich-Schiller-Universität Jena
Sergey Kubatkin
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Samuel Lara Avila
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Saroj Prasad Dash
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
npj 2D Materials and Applications
23977132 (eISSN)
Vol. 8 1 55Tvådimensionell spintronik minnesteknik
Vetenskapsrådet (VR) (2021-05925), 2021-12-01 -- 2024-11-30.
2D material-baserad teknologi för industriella applikationer (2D-TECH)
VINNOVA (2019-00068), 2020-05-01 -- 2024-12-31.
GKN Aerospace Sweden (2D-tech), 2021-01-01 -- 2024-12-31.
Spinntronik med topologiskt kvantmaterial och magnetisk heterostruktur
Vetenskapsrådet (VR) (2021-04821), 2022-01-01 -- 2025-12-31.
2D Heterostructure Non-volatile Spin Memory Technology (2DSPIN-TECH)
Europeiska kommissionen (EU) (EC/HE/101135853), 2023-12-01 -- 2026-11-30.
Topologi och magnetism i nya kvantmaterial
Vetenskapsrådet (VR) (2018-07046), 2020-01-01 -- 2021-12-31.
Graphene Core Project 3 (Graphene Flagship)
Europeiska kommissionen (EU) (EC/H2020/881603), 2020-04-01 -- 2023-03-31.
Spinntronik med topologiskt kvantmaterial och magnetisk heterostruktur
Vetenskapsrådet (VR) (2021-04821), 2022-01-01 -- 2025-12-31.
Ämneskategorier
Den kondenserade materiens fysik
DOI
10.1038/s41699-024-00489-2