All-2D CVD-grown semiconductor field-effect transistors with van der Waals graphene contacts
Journal article, 2024
Two-dimensional (2D) semiconductors and van der Waals (vdW) heterostructures with graphene have generated enormous interest for future electronic, optoelectronic, and energy-harvesting applications. The electronic transport properties and correlations of such hybrid devices strongly depend on the quality of the materials via chemical vapor deposition (CVD) process, their interfaces and contact properties. However, detailed electronic transport and correlation properties of the 2D semiconductor field-effect transistor (FET) with vdW graphene contacts for understanding mobility limiting factors and metal-insulator transition properties are not explored. Here, we investigate electronic transport in scalable all-2D CVD-grown molybdenum disulfide (MoS2) FET with graphene contacts. The Fermi level of graphene can be readily tuned by a gate voltage to enable a nearly perfect band alignment and, hence, a reduced and tunable Schottky barrier at the contact with good field-effect channel mobility. Detailed temperature-dependent transport measurements show dominant phonon/impurity scattering as a mobility limiting mechanisms and a gate-and bias-induced metal-insulator transition in different temperature ranges, which is explained in light of the variable-range hopping transport. These studies in such scalable all-2D semiconductor heterostructure FETs will be useful for future electronic and optoelectronic devices for a broad range of applications.
Author
Anamul Md Hoque
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Antony George
Friedrich Schiller University Jena
Vasudev Ramachandra
Chalmers, Microtechnology and Nanoscience (MC2)
Emad Najafidehaghani
Friedrich Schiller University Jena
Ziyang Gan
Friedrich Schiller University Jena
Richa Mitra
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Bing Zhao
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
S. Sahoo
Institute of Physics Bhubaneswar
Homi Bhabha National Institute (HBNI)
Maria Abrahamsson
Chalmers, Chemistry and Chemical Engineering, Chemistry and Biochemistry
Qiuhua Liang
Chalmers, Physics, Condensed Matter and Materials Theory
Julia Wiktor
Chalmers, Physics, Condensed Matter and Materials Theory
Andrey Turchanin
Friedrich Schiller University Jena
Sergey Kubatkin
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Samuel Lara Avila
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Saroj Prasad Dash
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
npj 2D Materials and Applications
23977132 (eISSN)
Vol. 8 1 552Dimensional van der Waals Spin-Orbit Torque Technology
Swedish Research Council (VR) (2021-05925), 2021-12-01 -- 2024-11-30.
2D material-based technology for industrial applications (2D-TECH)
VINNOVA (2019-00068), 2020-05-01 -- 2024-12-31.
GKN Aerospace Sweden (2D-tech), 2021-01-01 -- 2024-12-31.
Spintronics with Topological Quantum Material and Magnetic Heterostructures
Swedish Research Council (VR) (2021-04821), 2022-01-01 -- 2025-12-31.
2D Heterostructure Non-volatile Spin Memory Technology (2DSPIN-TECH)
European Commission (EC) (EC/HE/101135853), 2023-12-01 -- 2026-11-30.
Topology and Magnetism in Novel Quantum Materials
Swedish Research Council (VR) (2018-07046), 2020-01-01 -- 2021-12-31.
Graphene Core Project 3 (Graphene Flagship)
European Commission (EC) (EC/H2020/881603), 2020-04-01 -- 2023-03-31.
Spintronics with Topological Quantum Material and Magnetic Heterostructures
Swedish Research Council (VR) (2021-04821), 2022-01-01 -- 2025-12-31.
Subject Categories
Condensed Matter Physics
DOI
10.1038/s41699-024-00489-2