Spintronics with graphene-hexagonal boron nitride van der Waals heterostructures
Artikel i vetenskaplig tidskrift, 2014

Hexagonal boron nitride (h-BN) is a large bandgap insulating isomorph of graphene, ideal for atomically thin tunnel barrier applications. In this letter, we demonstrate large area chemical vapor deposited (CVD) h-BN as a promising spin tunnel barrier in graphene spin transport devices. In such structures, the ferromagnetic tunnel contacts with h-BN barrier are found to show robust tunneling characteristics over a large scale with resistances in the favorable range for efficient spin injection into graphene. The non-local spin transport and precession experiments reveal spin lifetime approximate to 500 ps and spin diffusion length approximate to 1.6 mu m in graphene with tunnel spin polarization approximate to 11% at 100 K. The electrical and spin transport measurements at different injection bias current and gate voltages confirm tunnel spin injection through h-BN barrier. These results open up possibilities for implementation of large area CVD h-BN in spintronic technologies.

Författare

Venkata Kamalakar Mutta

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

André Dankert

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Johan Bergsten

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Tommy Ive

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Saroj Prasad Dash

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 105 212405 212405

Styrkeområden

Informations- och kommunikationsteknik

Nanovetenskap och nanoteknik

Materialvetenskap

Ämneskategorier

Fysik

Nanoteknik

Infrastruktur

Nanotekniklaboratoriet

DOI

10.1063/1.4902814

Mer information

Skapat

2017-10-07