Electric field effects on spin accumulation in Nb-doped SrTiO3 using tunable spin injection contacts at room temperature
Artikel i vetenskaplig tidskrift, 2014

We report on features in charge transport and spin injection in an oxide semiconductor, Nb-doped SrTiO3. This is demonstrated using electrically tunable spin injection contacts which exploit the large electric field at the interface and its interplay with the relative permittivity of the semiconductor. We realize spin accumulation in Nb-doped SrTiO3 which displays a unique dependence of the spin lifetime with bias polarity. These findings suggest a strong influence of the interface electric field on the charge transport as well as on spin accumulation unlike in conventional semiconductors and opens up promising avenues in oxide spintronics.

Författare

Saroj Prasad Dash

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

A. M. Kamerbeek

Rijksuniversiteit Groningen

André Dankert

Chalmers University of Technology

André Dankert

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

B. J. van Wees

Rijksuniversiteit Groningen

T Banerjee

Rijksuniversiteit Groningen

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 104 212106

Styrkeområden

Nanovetenskap och nanoteknik

Materialvetenskap

Ämneskategorier

Fysik

Nanoteknik

DOI

10.1063/1.4880895