Thermally Driven Multilevel Non-Volatile Memory with Monolayer MoS2 for Brain-Inspired Artificial Learning
Artikel i vetenskaplig tidskrift, 2023
reverse hysteresis
high-temperature transport
monolayer MoS2 transistors
multilevel non-volatile memory
neuromorphic computing
Författare
Sameer Kumar Mallik
Institute of Physics
Homi Bhabha National Institute (HBNI)
Roshan Padhan
Institute of Physics
Homi Bhabha National Institute (HBNI)
Mousam Charan Sahu
Homi Bhabha National Institute (HBNI)
Institute of Physics
Suman Roy
Homi Bhabha National Institute (HBNI)
Institute of Physics
Gopal K. Pradhan
Kalinga Institute of Industrial Technology (KIIT)
Prasana Kumar Sahoo
Indian Institute of Technology Kharagpur
Saroj Prasad Dash
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
S. Sahoo
Homi Bhabha National Institute (HBNI)
Institute of Physics
ACS Applied Materials & Interfaces
1944-8244 (ISSN) 1944-8252 (eISSN)
Vol. 15 30 36527-36538Ämneskategorier
Robotteknik och automation
Den kondenserade materiens fysik
DOI
10.1021/acsami.3c06336
PubMed
37467425