Thermally Driven Multilevel Non-Volatile Memory with Monolayer MoS2 for Brain-Inspired Artificial Learning
Journal article, 2023

The demands of modern electronic components require advanced computing platforms for efficient information processing to realize in-memory operations with a high density of data storage capabilities toward developing alternatives to von Neumann architectures. Herein, we demonstrate the multifunctionality of monolayer MoS2 memtransistors, which can be used as a high-geared intrinsic transistor at room temperature; however, at a high temperature (>350 K), they exhibit synaptic multilevel memory operations. The temperature-dependent memory mechanism is governed by interfacial physics, which solely depends on the gate field modulated ion dynamics and charge transfer at the MoS2/dielectric interface. We have proposed a non-volatile memory application using a single Field Effect Transistor (FET) device where thermal energy can be ventured to aid the memory functions with multilevel (3-bit) storage capabilities. Furthermore, our devices exhibit linear and symmetry in conductance weight updates when subjected to electrical potentiation and depression. This feature has enabled us to attain a high classification accuracy while training and testing the Modified National Institute of Standards and Technology datasets through artificial neural network simulation. This work paves the way toward reliable data processing and storage using 2D semiconductors with high-packing density arrays for brain-inspired artificial learning.

monolayer MoS2 transistors

neuromorphic computing

reverse hysteresis

multilevel non-volatile memory

high-temperature transport

Author

Sameer Kumar Mallik

Homi Bhabha National Institute (HBNI)

Institute of Physics

Roshan Padhan

Institute of Physics

Homi Bhabha National Institute (HBNI)

Mousam Charan Sahu

Institute of Physics

Homi Bhabha National Institute (HBNI)

Suman Roy

Institute of Physics

Homi Bhabha National Institute (HBNI)

Gopal K. Pradhan

Kalinga Institute of Industrial Technology (KIIT)

Prasana Kumar Sahoo

Indian Institute of Technology

Saroj Prasad Dash

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

S. Sahoo

Institute of Physics

Homi Bhabha National Institute (HBNI)

ACS Applied Materials & Interfaces

1944-8244 (ISSN) 1944-8252 (eISSN)

Vol. 15 30 36527-36538

Subject Categories

Robotics

Condensed Matter Physics

DOI

10.1021/acsami.3c06336

PubMed

37467425

More information

Latest update

5/29/2024