Thermal creation of electron spin polarization in n-type silicon
Artikel i vetenskaplig tidskrift, 2013

Conversion of heat into a spin-current in electron doped silicon can offer a promising path for spin-caloritronics. Here, we create an electron spin polarization in the conduction band of n-type silicon by producing a temperature gradient across a ferromagnetic tunnel contact. The substrate heating experiments induce a large spin signal of 95 μV, corresponding to 0.54 meV spin-splitting in the conduction band of n-type silicon by Seebeck spin tunneling mechanism. The thermal origin of the spin injection has been confirmed by the quadratic scaling of the spin signal with the Joule heating current and linear dependence with the heating power.

CONTACTS

ACCUMULATION

FERROMAGNET

INJECTION

SPINTRONICS

Författare

André Dankert

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Saroj Prasad Dash

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 103 24 article nr. 242405- 242405

Styrkeområden

Nanovetenskap och nanoteknik

Ämneskategorier

Fysik

Nanoteknik

DOI

10.1063/1.4845295