Tunnel Magnetoresistance with Atomically Thin Two‐Dimensional Hexagonal Boron Nitride Barriers
Artikel i vetenskaplig tidskrift, 2015

The two-dimensional atomically thin insulator hexagonal boron nitride (h-BN) constitutes a new paradigm in tunnel based devices. A large band gap, along with its atomically flat nature without dangling bonds or interface trap states, makes it an ideal candidate for tunnel spin transport in spintronic devices. Here, we demonstrate the tunneling of spin-polarized electrons through large area monolayer h-BN prepared by chemical vapor deposition in magnetic tunnel junctions. In ferromagnet/h-BN/ferromagnet heterostructures fabricated on a chip scale, we show tunnel magnetoresistance at room temperature. Measurements at different bias voltages and on multiple devices with different ferromagnetic electrodes establish the spin polarized tunneling using h-BN barriers. These results open the way for integration of 2D monolayer insulating barriers in active spintronic devices and circuits operating at ambient temperature, and for further exploration of their properties and prospects.

hexagonal boron nitride

2D layered materials

tunnel barrier

CVD

magnetic tunnel junction

spintronics

tunnel magnetoresistance

Författare

André Dankert

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Venkata Kamalakar Mutta

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Abdul Wajid

Chalmers, Mikroteknologi och nanovetenskap (MC2)

Ram Shanker Patel

Birla Institute of Technology and Science Pilani

Saroj Prasad Dash

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Nano Research

1998-0124 (ISSN) 1998-0000 (eISSN)

Vol. 8 4 1357-1364

Styrkeområden

Nanovetenskap och nanoteknik

Materialvetenskap

Ämneskategorier

Fysik

Nanoteknik

Infrastruktur

Nanotekniklaboratoriet

DOI

10.1007/s12274-014-0627-4