Disorder is not always bad for charge-to-spin conversion in WTe2
Artikel i vetenskaplig tidskrift, 2021

The Wang group at Stanford University demonstrates disordered WTe films for efficient charge-to-spin conversion phenomena. The deposition of these films by sputtering and the charge-to-spin conversion resilience against disorder make them attractive for applications in new magnetic memory devices.

Författare

Marcos Guimarães

Rijksuniversiteit Groningen

Saroj Prasad Dash

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Matter

25902393 (ISSN) 25902385 (eISSN)

Vol. 4 5 1440-1441

Ämneskategorier

Materialkemi

Annan fysik

Den kondenserade materiens fysik

DOI

10.1016/j.matt.2021.04.009

Mer information

Senast uppdaterat

2021-05-19