Gate-tunable Hall sensors on large area CVD graphene protected by h-BN with 1D edge contacts
Artikel i vetenskaplig tidskrift, 2017

Graphene is an excellent material for Hall sensors due to its atomically thin structure, high carrier mobility, and low carrier density. However, graphene devices need to be protected from the environment for reliable and durable performance in different environmental conditions. Here we present magnetic Hall sensors fabricated on large area commercially available chemical vapor deposited (CVD) graphene protected by exfoliated hexagonal boron nitride (h-BN). To connect the graphene active regions of Hall samples to the outputs, 1D edge contacts were utilized which show reliable and stable electrical properties. The operation of the Hall sensors shows the current-related sensitivity up to 345 V/(AT). By changing the carrier concentration and type in graphene by the application of gate voltage, we are able to tune the Hall sensitivity. Published by AIP Publishing.

Magnetic-Field

Performance

Devices

Författare

Bogdan Karpiak

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

André Dankert

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Saroj Prasad Dash

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Journal of Applied Physics

0021-8979 (ISSN) 1089-7550 (eISSN)

Vol. 122 5 Article no 054506 - 054506

Graphene-Based Revolutions in ICT And Beyond (Graphene Flagship)

Europeiska kommissionen (FP7), 2013-10-01 -- 2016-03-31.

Ämneskategorier

Fysik

Nanoteknik

DOI

10.1063/1.4997463

Mer information

Skapat

2017-10-07