Charge-spin conversion in layered semimetal TaTe2 and spin injection in van der Waals heterostructures
Journal article, 2020

A spin-polarized current source using nonmagnetic layered materials is promising for next-generation all-electrical spintronic science and technology. Here we electrically created spin polarization in a layered semimetal TaTe2 via the charge-spin conversion process. Using a hybrid device of TaTe2 in a van der Waals heterostructure with graphene, the spin polarization in TaTe2 is efficiently injected and detected by nonlocal spin-switch, Hanle spin precession, and inverse spin Hall effect measurements. Systematic experiments at different bias currents and gate voltages in a vertical geometry prove the TaTe2 as a nonmagnetic spin source at room temperature. These findings demonstrate the possibility of making an all-electrical spintronic device in a two-dimensional van der Waals heterostructure, which can be essential building blocks in energy-efficient spin-orbit technology.

Author

Anamul Md Hoque

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Dmitrii Khokhriakov

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Bogdan Karpiak

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Saroj Prasad Dash

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Physical Review Research

26431564 (ISSN)

Vol. 2 3 033204

Subject Categories

Other Physics Topics

Other Electrical Engineering, Electronic Engineering, Information Engineering

Condensed Matter Physics

DOI

10.1103/PhysRevResearch.2.033204

More information

Latest update

4/21/2023