Large Non-Volatile Frequency Tuning of Spin Hall Nano-Oscillators using Circular Memristive Nano-Gates
Journal article, 2024

Spin Hall nano oscillators (SHNOs) are promising candidates for neuromorphic computing due to their miniaturized dimensions, non-linearity, fast dynamics, and ability to synchronize in long chains and arrays. However, tuning the individual SHNOs in large chains/arrays, which is key to implementing synaptic control, has remained a challenge. Here, we demonstrate circular memristive nano-gates, both precisely aligned and shifted with respect to nano-constriction SHNOs of W/CoFeB/HfOx, with increased quality of the device tunability. Gating at the exact center of the nano-constriction region is found to cause irreversible degradation to the oxide layer, resulting in a permanent frequency shift of the auto-oscillating modes. As a remedy, gates shifted outside of the immediate nano-constriction region can tune the frequency dramatically (>200 MHz) without causing any permanent change to the constriction region. Circular memristive nano-gates can, therefore, be used in SHNO chains/arrays to manipulate the synchronization states precisely over large networks of oscillators.

Memristors

Nanoscale devices

Fabrication

Degradation

Neuromorphic computing

Oscillators

Synchronization

Logic gates

Circular nano-gating

Spin Hall nano-oscillators

Memristive control

Author

Maha Khademi

NanOsc

Akash Kumar

University of Gothenburg

Mona Rajabali

NanOsc

Saroj Prasad Dash

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

2D-Tech

Johan Åkerman

University of Gothenburg

IEEE Electron Device Letters

0741-3106 (ISSN) 15580563 (eISSN)

Vol. 45 2 268-271

2D material-based technology for industrial applications (2D-TECH)

GKN Aerospace Sweden (2D-tech), 2021-01-01 -- 2024-12-31.

VINNOVA (2019-00068), 2020-05-01 -- 2024-12-31.

Subject Categories

Condensed Matter Physics

DOI

10.1109/LED.2023.3339218

More information

Latest update

3/7/2024 9