Gate-tunable spin-galvanic effect in graphene-topological insulator van der Waals heterostructures at room temperature
Journal article, 2020

Unique electronic spin textures in topological states of matter are promising for emerging spin-orbit driven memory and logic technologies. However, there are several challenges related to the enhancement of their performance, electrical gate-tunability, interference from trivial bulk states, and heterostructure interfaces. We address these challenges by integrating two-dimensional graphene with a three-dimensional topological insulator (TI) in van der Waals heterostructures to take advantage of their remarkable spintronic properties and engineer proximity-induced spin-charge conversion phenomena. In these heterostructures, we experimentally demonstrate a gate-tunable spin-galvanic effect (SGE) at room temperature, allowing for efficient conversion of a non-equilibrium spin polarization into a transverse charge current. Systematic measurements of SGE in various device geometries via a spin switch, spin precession, and magnetization rotation experiments establish the robustness of spin-charge conversion in the Gr-TI heterostructures. Importantly, using a gate voltage, we reveal a strong electric field tunability of both amplitude and sign of the spin-galvanic signal. These findings provide an efficient route for realizing all-electrical and gate-tunable spin-orbit technology using TIs and graphene in heterostructures, which can enhance the performance and reduce power dissipation in spintronic circuits.

polarization

topology

electric field

three-dimensional modeling

temperature effect

magnetization

Author

Dmitrii Khokhriakov

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

2D-Tech

Anamul Md Hoque

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

2D-Tech

Bogdan Karpiak

2D-Tech

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Saroj Prasad Dash

2D-Tech

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Nature Communications

2041-1723 (ISSN)

Vol. 11 1 3657

Graphene Core Project 3 (Graphene Flagship)

European Commission (EC), 2020-04-01 -- 2023-03-31.

Inducerade Spin Strukturer i var der Waals Heterostrukturer

Swedish Research Council (VR), 2015-12-01 -- 2017-12-31.

Graphene Core Project 2 (Graphene Flagship)

European Commission (EC), 2018-04-01 -- 2020-03-31.

Graphene Core Project 1. Graphene-based disruptive technologies (Graphene Flagship)

European Commission (EC), 2016-04-01 -- 2018-03-31.

Spin kommunikation i Dirac Material heterostrukturer

Swedish Research Council (VR), 2017-01-01 -- 2020-12-31.

Subject Categories

Other Physics Topics

Nano Technology

Other Electrical Engineering, Electronic Engineering, Information Engineering

Condensed Matter Physics

Infrastructure

Nanofabrication Laboratory

DOI

10.1038/s41467-020-17481-1

More information

Latest update

5/25/2021