Ultranarrow Semiconductor WS2 Nanoribbon Field-Effect Transistors
Journal article, 2025
Semiconducting transition metal dichalcogenides (TMDs) have attracted significant attention for their potential to develop high-performance, energy-efficient, and nanoscale electronic devices. Despite notable advancements in scaling down the gate and channel length of TMD field-effect transistors (FETs), the fabrication of sub-30 nm narrow channels and devices with atomic-scale edge control still poses challenges. Here, we demonstrate a crystallography-controlled nanostructuring technique to fabricate ultranarrow tungsten disulfide (WS2) nanoribbons as small as sub-10 nm in width. The WS2 nanoribbon junctions having different widths display diodic current-voltage characteristics, providing a way to create and tune nanoscale device properties by controlling the size of the structures. The transport properties of the nanoribbon FETs are primarily governed by narrow channel effects, where the mobility in the narrow channels is limited by edge scattering. Our findings on nanoribbon devices hold potential for developing future-generation nanometer-scale van der Waals semiconductor-based devices and circuits.
crystallographically controlled nanostructuring
field-effect transistors
WS2
diodes
zigzagedges
nanoribbon
transition metal dichalcogenides
2D semiconductors
TMDs
Author
Anamul Md Hoque
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Aleksandr Poliakov
Chalmers, Physics, Nano and Biophysics
Battulga Munkhbat
Chalmers, Physics, Nano and Biophysics
Konstantina Iordanidou
Chalmers, Physics, Condensed Matter and Materials Theory
Abhay Vivek Agrawal
Chalmers, Physics, Nano and Biophysics
Chalmers, Physics, Nano and Biophysics
Andrew Yankovich
Chalmers, Physics, Nano and Biophysics
Sameer Kumar Mallik
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Bing Zhang
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Richa Mitra
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Alexei Kalaboukhov
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Eva Olsson
Chalmers, Physics, Nano and Biophysics
Sergey Kubatkin
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Julia Wiktor
Chalmers, Physics, Condensed Matter and Materials Theory
Samuel Lara Avila
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Timur Shegai
Chalmers, Physics, Nano and Biophysics
Saroj Prasad Dash
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Nano Letters
1530-6984 (ISSN) 1530-6992 (eISSN)
Vol. 25 5 1750-1757Graphene Core Project 3 (Graphene Flagship)
European Commission (EC) (EC/H2020/881603), 2020-04-01 -- 2023-03-31.
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Subject Categories (SSIF 2025)
Materials Chemistry
Condensed Matter Physics
Areas of Advance
Nanoscience and Nanotechnology
Energy
Materials Science
Infrastructure
Myfab (incl. Nanofabrication Laboratory)
DOI
10.1021/acs.nanolett.4c01076
PubMed
39846459