An X-band low phase noise AlGaN-GaN-HEMT MMIC push-push oscillator
Paper in proceedings, 2011

An X-band low phase noise AlGaN-GaN HEMT MMIC push-push oscillator is designed, fabricated, and characterized. The oscillator is based on two common gate Colpitts oscillators. A minimum phase noise of -101 dBc at 100 kHz offset is achieved. The MMIC was fabricate in an 'in-house process' at Chalmers University of Technology.

AlGaN-GaN HEMT

oscillator

MMIC

Author

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Szhau Lai

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Dan Kuylenstierna

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Jonathan Felbinger

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

K. Andersson

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

33rd IEEE Compound Semiconductor Integrated Circuit Symposium: Integrated Circuits in GaAs, InP, SiGe, GaN and Other Compound Semiconductors, CSICS 2011, Waikoloa, 16-19 October 2011

1550-8781 (ISSN)

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (2010-2017)

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/CSICS.2011.6062492

ISBN

978-161284712-2

More information

Created

10/7/2017