An X-band low phase noise AlGaN-GaN-HEMT MMIC push-push oscillator
Paper in proceeding, 2011
An X-band low phase noise AlGaN-GaN HEMT MMIC push-push oscillator is designed, fabricated, and characterized. The oscillator is based on two common gate Colpitts oscillators. A minimum phase noise of -101 dBc at 100 kHz offset is achieved. The MMIC was fabricate in an 'in-house process' at Chalmers University of Technology.
AlGaN-GaN HEMT
oscillator
MMIC
Author
Herbert Zirath
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Szhau Lai
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Dan Kuylenstierna
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Jonathan Felbinger
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
K. Andersson
Niklas Rorsman
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
33rd IEEE Compound Semiconductor Integrated Circuit Symposium: Integrated Circuits in GaAs, InP, SiGe, GaN and Other Compound Semiconductors, CSICS 2011, Waikoloa, 16-19 October 2011
1550-8781 (ISSN)
978-161284712-2 (ISBN)
Areas of Advance
Information and Communication Technology
Nanoscience and Nanotechnology
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/CSICS.2011.6062492
ISBN
978-161284712-2