A highly linear double balanced Schottky diode S-band mixer
Journal article, 2006

A high-level double balanced SiC Schottky diode mixer in SiC monolithic microwave integrated circuit (MMIC) technology has been designed, processed and characterized. The mixer is a single ended in- and output circuit with coupled transformers as baluns to enable a compact design, resulting in a total area of 2.2×2.2mm2. The mixer has a maximum IIP3 of 38dBm and IIP2 of 58dBm at 3.3GHz, and a typical P1 dB of 23dBm in the S-band. The minimum conversion loss was 12dBm at 2.4GHz. The high power operation of the mixer shows that SiC MMIC can perform well in high microwave radiation environments

Author

Mattias Sudow

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Kristoffer Andersson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Per-Åke Nilsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

IEEE Microwave and Wireless Components Letters

1531-1309 (ISSN)

Vol. 16 6 336 - 8

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/LMWC.2006.875625

More information

Created

10/6/2017