Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors
Journal article, 2015
Engineering
Electrical & Electronic
AlInN/AlN/GaN
low frequency noise (LFN) measurement
high electron mobility transistor (HEMT)
HEMT
Author
Thi Ngoc Do Thanh
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Anna Malmros
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
P. Gamarra
Thales Group
C. Lacam
Thales Group
M. A. di Forte-Poisson
Thales Group
M. Tordjman
Thales Group
Mikael Hörberg
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
R. Aubry
Thales Group
Niklas Rorsman
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Dan Kuylenstierna
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
IEEE Electron Device Letters
0741-3106 (ISSN) 15580563 (eISSN)
Vol. 36 4 315-317 7035032Driving Forces
Sustainable development
Areas of Advance
Nanoscience and Nanotechnology
Subject Categories
Nano Technology
DOI
10.1109/led.2015.2400472