Generation of multi-Gigabit/s OFDM signals at W-band with a graphene FET MMIC mixer
Paper in proceeding, 2017
This paper presents multi-Gigabit/s Orthogonal Frequency Division Multiplexing (OFDM) signal generation by using a graphene field effect transistor based resistive mixer at w-band. The OFDM signals consist of 64 subcarriers each carrying a quadrature-phase-shift-keying (QPSK) symbols. The results show that a bit error rate of 10 -4 is achievable for 8 Gbps data rate.
MMIC
W-band
High data rate communication
OFDM
Resistive mixer
Graphene FET
Author
Omid Habibpour
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Dhecha Nopchinda
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Zhongxia Simon He
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Niklas Rorsman
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Herbert Zirath
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
IEEE MTT-S International Microwave Symposium Digest
0149645X (ISSN)
1185-1187 80588139781509063604 (ISBN)
Areas of Advance
Information and Communication Technology
Nanoscience and Nanotechnology
Building Futures (2010-2018)
Infrastructure
Kollberg Laboratory
Nanofabrication Laboratory
Driving Forces
Sustainable development
Subject Categories
Materials Engineering
Electrical Engineering, Electronic Engineering, Information Engineering
Nano Technology
DOI
10.1109/MWSYM.2017.8058813
ISBN
9781509063604