Comparison of the DC and microwave performance of AlGaN/GaN HEMTs grown on SiC by MOCVD with Fe-doped or unintentionally doped GaN buffer layers
Journal article, 2006
Author
Vincent Desmaris
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Mariusz Rudzinski
Niklas Rorsman
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Paul Hageman
Poul Larsen
Herbert Zirath
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Thomas Röddle
Rik Jos
IEEE Transactions on Electron Devices
Vol. 53 9 2413-17
Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering