Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces
Book chapter, 2024
Modest channel carrier mobility in SiC-MOSFETs with NO annealed gate oxides has been the main factor hampering development of low power devices (300 – 650 V). A very fast interface trap, noted as NI, has been suggested to be the main culprit for poor inversion channel carrier mobility. The origin of the NI trap is unknown, but it is likely a property of the SiO2 and it is enhanced during post nitridation. In this study we show that the NI trap is also detected in 4H-SiC/AlN and 4H-SiC/Al2O3 MIS-capacitors. Observations are done using conductance spectroscopy and capacitance voltage measurements at cryogenic temperatures. This strongly suggests that the NI trap is a property of the SiC surface and not the dielectric used to form the SiC/dielectric interface. Furthermore, a scanning transmission electron microscopy (STEM) was performed to confirm that there are no SiO2 layers or islands present at the 4H-SiC/AlN and 4H-SiC/Al2O3 interfaces.
Aluminium Nitride
Interface Traps
Aluminium Oxide
Conductance Spectroscopy
MOS Capacitor
Capacitance Voltage
Scanning Transmission Electron Microscopy
Silicon Carbide
Interface Characterization
Author
Arnar M. Vidarsson
University of Iceland
A. R. Persson
Linköping University
J. T. Chen
SweGaN AB
Linköping University
Daniel Haasmann
Griffith University
J. Hassan
Linköping University
Sima Dimitrijev
Griffith University
Niklas Rorsman
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Vanya Darakchieva
Linköping University
Lund University
E. O. Sveinbjornsson
University of Iceland
Linköping University
Solid State Phenomena
1012-0394 (ISSN) 1662-9779 (eISSN)
Vol. 358 59-64Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering
Condensed Matter Physics
DOI
10.4028/p-8gOXKi