Characterization and physical modeling of MOS capacitors in epitaxial graphene monolayers and bilayers on 6H-SiC
Journal article, 2016
Author
Michael Winters
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
E. O. Sveinbjornsson
Linköping University
University of Iceland
C. Melios
National Physical Laboratory (NPL)
University of Surrey
O. Kazakova
National Physical Laboratory (NPL)
W. Strupinski
Instytutu Technologii Materialow Elektronicznych w Warszawie
Niklas Rorsman
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
AIP Advances
2158-3226 (ISSN) 21583226 (eISSN)
Vol. 6 8 085010Graphene-Based Revolutions in ICT And Beyond (Graphene Flagship)
European Commission (EC) (EC/FP7/604391), 2013-10-01 -- 2016-03-31.
Subject Categories
Physical Sciences
DOI
10.1063/1.4961361