An SiC MESFET-based MMIC process
Journal article, 2006
A monolithic microwave integrated circuit (MMIC)process based on an in-house SiC MESFET technology has been developed. The process uses microstrip technology, and a complete set of passive components, including MIMcapacitors, spiral inductors,thin-film resistors, and via-holes, has been developed. The potential of the process is demonstrated by an 8-W power amplifier
at 3 GHz, a high-linearity -band mixer showing a third-order intercept point of 38 dBm, and a high-power limiter.
Author
Mattias Sudow
Chalmers, Microtechnology and Nanoscience (MC2)
Kristoffer Andersson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Niklas Billström
Jan Grahn
Chalmers, Microtechnology and Nanoscience (MC2)
Hans Hjelmgren
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Per-Åke Nilsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Johan Ståhl
Herbert Zirath
Chalmers, Microtechnology and Nanoscience (MC2)
Niklas Rorsman
Chalmers, Microtechnology and Nanoscience (MC2)
IEEE Transactions on Microwave Theory and Techniques
Vol. 54 12, Part 1 4072-4078
Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering