Integration of components in a 50 nm {InGaAs}-{InAlAs}-{InP} {HEMT} process with pseudomorphic $\rm{In}_{0.35}{Ga}_{0.35}{As}$ channel
Paper in proceedings, 2004

Author

Anders Mellberg

Chalmers, Microtechnology and Nanoscience (MC2)

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Mikael Malmkvist

Chalmers, Microtechnology and Nanoscience (MC2)

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Jan Grahn

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Chalmers, Microtechnology and Nanoscience (MC2)

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2)

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Chalmers, Microtechnology and Nanoscience (MC2)

Proc. 34th European Microwave Conf.

171-174

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

More information

Created

10/7/2017