Integration of components in a 50 nm {InGaAs}-{InAlAs}-{InP} {HEMT} process with pseudomorphic $\rm{In}_{0.35}{Ga}_{0.35}{As}$ channel
Paper in proceeding, 2004
Author
[Person ebb01e6e-5929-4354-8588-885ef0ecc3a1 not found]
Chalmers, Microtechnology and Nanoscience (MC2)
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
[Person 5a8bbfc8-b54a-4a13-8549-869d61238463 not found]
Chalmers, Microtechnology and Nanoscience (MC2)
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
[Person 0b6f1084-6c62-4c77-b910-3c2c491140ea not found]
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Chalmers, Microtechnology and Nanoscience (MC2)
[Person afbd36d8-2dcb-45cc-ac79-e56c7eafc588 not found]
Chalmers, Microtechnology and Nanoscience (MC2)
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
[Person ee6c1c7c-4a22-494d-b363-457c26b1680f not found]
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Chalmers, Microtechnology and Nanoscience (MC2)
Proc. 34th European Microwave Conf.
171-174
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering