Ultralow-Power Cryogenic InP HEMT With Minimum Noise Temperature of 1 K at 6 GHz
Journal article, 2012

We present in this letter an InGaAs/InAlAs/InP high-electron-mobility transistor (InP HEMT) with record noise temperature at very low dc power dissipation. By minimizing parasitic contact and sheet resistances and the gate current, a 130-nm-gate-length InP HEMT was optimized for cryogenic low-noise operation. When integrated in a 4- to 8-GHz three-stage hybrid low-noise amplifier operating at 10 K, a noise temperature of 1.2 K +/- 1.3 K at 5.2 GHz was measured. The gain of the amplifier across the entire band was 44 dB, consuming only 4.2 mW of dc power. The extracted minimum noise temperature of the InP HEMT was 1 K at 6 GHz.

low power

low noise

InGaAs/InAlAs/InP high-electron-mobility transistor (InP HEMT)

Cryogenic

Author

Joel Schleeh

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Göran Alestig

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

John Halonen

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

Anna Malmros

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Bengt Nilsson

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

Per-Åke Nilsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Piotr Starski

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Niklas Wadefalk

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Jan Grahn

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

IEEE Electron Device Letters

0741-3106 (ISSN)

Vol. 33 5 664-666 6170540

Subject Categories

Physical Sciences

DOI

10.1109/led.2012.2187422

More information

Created

10/7/2017