Influence of gate-channel distance in low-noise InP HEMTs
Paper in proceedings, 2013

The effect on the electrical properties, relevant to noise, from the gate-channel distance (barrier layer thickness) in 130 nm gate-length InP HEMTs was investigated. An increased quality of pinch-off was seen in HEMTs with an 8 nm barrier layer thickness compared to an 11 nm barrier. For the 8 nm barrier material the gate leakage increased from 1 mu A/mm to 7 mu A/mm at -1 V gate bias.

InP HEMT

LNA

noise

Author

Per-Åke Nilsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Helena Rodilla

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Joel Schleeh

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Niklas Wadefalk

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Jan Grahn

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

2013 International Conference on Indium Phosphide and Related Materials

1092-8669 (ISSN)

Areas of Advance

Information and Communication Technology

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/ICIPRM.2013.6562602

ISBN

978-1-4673-6130-9

More information

Created

10/7/2017