Cryogenic Kink Effect in InP pHEMTs: A Pulsed Measurements Study
Journal article, 2015

We present a study based on pulsed measurement results of the kink effect observed on the I-V output characteristics in InGaAs/InAlAs/InP pseudomorphic high-electron mobility transistors (InP pHEMTs) at cryogenic temperatures. Pulsed measurements were performed at 300 and $10$ K. Gate and drain lags were observed at both temperatures with a strong increase upon cooling for the drain lag. To study the influence of surface traps in the kink, pulsed measurements of devices passivated by either atomic layer deposited Al²O³ or plasma enhanced chemical vapor deposited Si³N⁴ were compared with no significant differences at 10 K. The influence on the kink effect from the buffer was studied by comparing pulsed measurement data from an InP pHEMT with measurements on a GaAs metamorphic HEMT (GaAs mHEMT). For the GaAs mHEMT, an increase of the drain lag at 10 K was observed when compared with the InP pHEMT. Contrary to the InP HEMT, for the GaAs mHEMT the 0.1 μs pulses were short enough to eliminate the kink when using a quiescent point with VDS = 0. The quality of the pinchoff was sensitive to pulse length and quiescent point for the InP pHEMT but not for the GaAs mHEMT.

Cryogenic

traps

InGaAs/InAlAs/GaAs metamorphic HEMT (GaAs mHEMT)

InGaAs/InAlAs/InP pseudomorphic high-electron mobility transistor (InP pHEMT)

kink effect

pulsed measurements

low noise

Author

Helena Rodilla

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

GigaHertz Centre

Joel Schleeh

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

GigaHertz Centre

Per-Åke Nilsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

GigaHertz Centre

Jan Grahn

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

IEEE Transactions on Electron Devices

0018-9383 (ISSN)

Vol. 62 2 532-537

Areas of Advance

Information and Communication Technology

Infrastructure

Nanofabrication Laboratory

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/TED.2014.2380354

More information

Created

10/7/2017