Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers under a magnetic field
Paper in proceeding, 2019
magnetic field
InP HEMT
angular dependence
cryogenic
low noise amplifier
Author
Isabel Harrysson Rodrigues
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
David Niepce
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Technology
Giuseppe Moschetti
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Arsalan Pourkabirian
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Joel Schleeh
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Thilo Bauch
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Jan Grahn
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
IIS UTokyo SYMPOSIUM No.100
Nara, Japan,
Areas of Advance
Nanoscience and Nanotechnology
Subject Categories
Other Physics Topics
Other Materials Engineering
Condensed Matter Physics
Infrastructure
Nanofabrication Laboratory