Isabel Harrysson Rodrigues

Doctoral Student at Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Isabel Harrysson Rodrigues is working on a project to develop a C-band InP high electron mobility transistor low noise amplifier for a qubit read-out chain in a quantum computer. Previously she has been working with spintronics and took her master in nanoscience and microtechnology, after a bachelor in engineering physics.On her spare time she plays footvolley in the Swedish national team.

Source: chalmers.se

Showing 5 publications

2019

On the angular dependence of InP high electron mobility transistors for cryogenic low noise amplifiers in a magnetic field

Isabel Harrysson Rodrigues, David Niepce, Arsalan Pourkabirian et al
AIP Advances. Vol. 9 (8)
Journal article
2019

Cryogenic InP High Electron Mobility Transistors in a Magnetic Field

Isabel Harrysson Rodrigues
Licentiate thesis
2019

Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers under a magnetic field

Isabel Harrysson Rodrigues, David Niepce, Giuseppe Moschetti et al
IIS UTokyo SYMPOSIUM No.100
Paper in proceedings
2018

Origin and evolution of surface spin current in topological insulators

André Dankert, Priyamvada Bhaskar, Dmitrii Khokhriakov et al
Physical Review B. Vol. 97 (12)
Journal article
2018

Magnetic Influence on Cryogenic InP HEMT DC Characteristics

Isabel Harrysson Rodrigues, Arsalan Pourkabirian, Giuseppe Moschetti et al
Paper in proceedings

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