Isabel Harrysson Rodrigues

Doctoral Student at Terahertz and Millimetre Wave Laboratory

Isabel Harrysson Rodrigues is currently working with fabrication, characterization and modelling of graphene based THz devices, e.g. development of THz graphene field effect transistors on flexible substrates, as well as graphene based THz biometric sensor for increased security and sustainability. Her project is a part of the Graphene Flagship, that aims to take graphene and two-dimensional materials from laboratories to the European society.

During her licentiate studies the focus was partly to develop a C-band InP high electron mobility transistor (HEMT) low noise amplifier for a qubit read-out chain in a quantum computer, but also to investigate how these InP HEMTs behave in a magnetic field, which then because the main part of the licentiate thesis.

Previously she has been working with spintronics and topological materials and took her master in nanoscience and microtechnology, after a bachelor in engineering physics.

On her spare time, she paints, walks her dog and plays footvolley in the Swedish national team.

Source: chalmers.se
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Showing 5 publications

2019

On the angular dependence of InP high electron mobility transistors for cryogenic low noise amplifiers in a magnetic field

Isabel Harrysson Rodrigues, David Niepce, Arsalan Pourkabirian et al
AIP Advances. Vol. 9 (8)
Journal article
2019

Cryogenic InP High Electron Mobility Transistors in a Magnetic Field

Isabel Harrysson Rodrigues
Licentiate thesis
2019

Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers under a magnetic field

Isabel Harrysson Rodrigues, David Niepce, Giuseppe Moschetti et al
IIS UTokyo SYMPOSIUM No.100
Paper in proceedings
2018

Origin and evolution of surface spin current in topological insulators

André Dankert, Priyamvada Bhaskar, Dmitrii Khokhriakov et al
Physical Review B. Vol. 97 (12)
Journal article
2018

Magnetic Influence on Cryogenic InP HEMT DC Characteristics

Isabel Harrysson Rodrigues, Arsalan Pourkabirian, Giuseppe Moschetti et al
Paper in proceedings

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