Isabel Harrysson Rodrigues

Showing 16 publications

2022

Low-field mobility and high-field velocity of charge carriers in InGaAs/InP high-electron-mobility transistors

Isabel Harrysson Rodrigues, Andrei Vorobiev
IEEE Transactions on Electron Devices. Vol. 69 (4), p. 1786-1791
Journal article
2022

Geometrical magnetoresistance effect and mobility in graphene field-effect transistors

Isabel Harrysson Rodrigues, Andrey Generalov, Miika Soikkeli et al
Applied Physics Letters. Vol. 121 (1)
Journal article
2022

Mobility and quasi-ballistic charge carrier transport in graphene field-effect transistors

Isabel Harrysson Rodrigues, Niklas Rorsman, Andrei Vorobiev
Journal of Applied Physics. Vol. 132, p. 244303-1-244303-9
Journal article
2022

Terahertz biometric sensors for fingerprint scanning

Isabel Harrysson Rodrigues, Andrei Vorobiev, Xinxin Yang
Preprint
2022

Charge carrier transport in graphene field-effect transistor scaled down to submicron gate lengths

Isabel Harrysson Rodrigues, Andrei Vorobiev
2022 Compound Semiconductor Week, CSW 2022
Paper in proceeding
2021

Evaluation and Study of Mobility in GFETs by geometrical magnetoresistance

Isabel Harrysson Rodrigues, Andrei Vorobiev, Jan Stake
Other conference contribution
2019

Cryogenic InP High Electron Mobility Transistors in a Magnetic Field

Isabel Harrysson Rodrigues
Licentiate thesis
2019

Strong Geometrical Magnetoresistance and Angular Dependence in InP HEMTs for cryogenic LNAs

Isabel Harrysson Rodrigues, David Niepce, Arsalan Pourkabirian et al
Other conference contribution
2019

Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers under a magnetic field

Isabel Harrysson Rodrigues, David Niepce, Giuseppe Moschetti et al
IIS UTokyo SYMPOSIUM No.100
Paper in proceeding
2019

On the angular dependence of InP high electron mobility transistors for cryogenic low noise amplifiers in a magnetic field

Isabel Harrysson Rodrigues, David Niepce, Arsalan Pourkabirian et al
AIP Advances. Vol. 9 (8)
Journal article
2018

Magnetic Influence on CryogenicInP HEMT LNAs

Isabel Harrysson Rodrigues, Arsalan Pourkabirian, Giuseppe Moschetti et al
Other conference contribution
2018

Magnetic Influence on Cryogenic InP HEMT DC Characteristics

Isabel Harrysson Rodrigues, Arsalan Pourkabirian, Giuseppe Moschetti et al
CSW 2018 Proceedings, p. 183-183
Other conference contribution
2018

Origin and evolution of surface spin current in topological insulators

André Dankert, Priyamvada Bhaskar, Dmitrii Khokhriakov et al
Physical Review B. Vol. 97 (12)
Journal article

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Showing 1 research projects

2020–2023

Graphene Core Project 3 (Graphene Flagship)

Jari Kinaret Condensed Matter and Materials Theory
Saroj Prasad Dash Quantum Device Physics
Floriana Lombardi Quantum Device Physics
Muhammad Asad Terahertz and Millimetre Wave Laboratory
Andreas Isacsson Condensed Matter and Materials Theory
Zhenyuan Xia Materials and manufacture
Omid Habibpour Microwave Electronics
Patrik Johansson Materials Physics
Samuel Brem Condensed Matter and Materials Theory
Vincenzo Palermo Materials and manufacture
Isabel Harrysson Rodrigues Terahertz and Millimetre Wave Laboratory
Beatriz Ferreira Condensed Matter and Materials Theory
Daniel Erkensten Condensed Matter and Materials Theory
Jan Stake Terahertz and Millimetre Wave Laboratory
Jinhua Sun Materials and manufacture
Sankar Sasidharan Materials and manufacture
Herbert Zirath Microwave Electronics
Marlene Bonmann Terahertz and Millimetre Wave Laboratory
Simon Ovesen Condensed Matter and Materials Theory
Andrei Vorobiev Terahertz and Millimetre Wave Laboratory
Ermin Malic Condensed Matter and Materials Theory
Sergey Kubatkin Quantum Device Physics
Aleksandar Matic Materials Physics
European Commission (EC)

63 publications exist
There might be more projects where Isabel Harrysson Rodrigues participates, but you have to be logged in as a Chalmers employee to see them.