Isabel Harrysson Rodrigues
Isabel Harrysson Rodrigues is currently working with fabrication, characterization and modelling of graphene based THz devices, e.g. development of THz graphene field effect transistors on flexible substrates, as well as graphene based THz biometric sensor for increased security and sustainability. Her project is a part of the Graphene Flagship, that aims to take graphene and two-dimensional materials from laboratories to the European society.
During her licentiate studies the focus was partly to develop a C-band InP high electron mobility transistor (HEMT) low noise amplifier for a qubit read-out chain in a quantum computer, but also to investigate how these InP HEMTs behave in a magnetic field, which then because the main part of the licentiate thesis.
Previously she has been working with spintronics and topological materials and took her master in nanoscience and microtechnology, after a bachelor in engineering physics.
On her spare time, she paints, walks her dog and plays footvolley in the Swedish national team.
Showing 5 publications
Cryogenic InP High Electron Mobility Transistors in a Magnetic Field
Origin and evolution of surface spin current in topological insulators
Magnetic Influence on Cryogenic InP HEMT DC Characteristics
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Showing 1 research projects
Graphene Core Project 3 (Graphene Flagship)