Isabel Harrysson Rodrigues
Doctoral Student at
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Isabel Harrysson Rodrigues is working on a project to develop a C-band InP high electron mobility transistor low noise amplifier for a qubit read-out chain in a quantum computer. Previously she has been working with spintronics and took her master in nanoscience and microtechnology, after a bachelor in engineering physics.On her spare time she plays footvolley in the Swedish national team.
Source: chalmers.se
Showing 5 publications
2019
On the angular dependence of InP high electron mobility transistors for cryogenic low noise amplifiers in a magnetic field
Isabel Harrysson Rodrigues, David Niepce, Arsalan Pourkabirian et al
AIP Advances. Vol. 9 (8)
Journal article
2019
Cryogenic InP High Electron Mobility Transistors in a Magnetic Field
Isabel Harrysson Rodrigues
Licentiate thesis
2019
Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers under a magnetic field
Isabel Harrysson Rodrigues, David Niepce, Giuseppe Moschetti et al
IIS UTokyo SYMPOSIUM No.100
Paper in proceedings
2018
Origin and evolution of surface spin current in topological insulators
André Dankert, Priyamvada Bhaskar, Dmitrii Khokhriakov et al
Physical Review B. Vol. 97 (12)
Journal article
2018
Magnetic Influence on Cryogenic InP HEMT DC Characteristics
Isabel Harrysson Rodrigues, Arsalan Pourkabirian, Giuseppe Moschetti et al
Paper in proceedings
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