On the angular dependence of InP high electron mobility transistors for cryogenic low noise amplifiers in a magnetic field
Journal article, 2019
This work was performed in GigaHertz Centre in a joint research project between Chalmers University of Technology, Low Noise Factory AB, Wasa Millimeter Wave AB, Omnisys Instruments AB and RISE Research Institutes of Sweden. We are grateful to Serguei Cherednichenko for valuable assistance in the noise measurements and Niklas Wadefalk for the LNA design.
Author
Isabel Harrysson Rodrigues
GigaHertz Centre
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
David Niepce
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Technology
Arsalan Pourkabirian
Qamcom Research & Technology
Low Noise Factory AB
Giuseppe Moschetti
Low Noise Factory AB
Joel Schleeh
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Thilo Bauch
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Jan Grahn
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
GigaHertz Centre
AIP Advances
2158-3226 (ISSN) 21583226 (eISSN)
Vol. 9 8 085004Areas of Advance
Nanoscience and Nanotechnology
Materials Science
Subject Categories
Atom and Molecular Physics and Optics
Other Physics Topics
Condensed Matter Physics
Infrastructure
Nanofabrication Laboratory
DOI
10.1063/1.5107493