Optimized InP HEMTs for low noise at cryogenic temperatures
Paper in proceedings, 2012
Cryogenic temepratures
InP high electron mobility transistors
low noise
Monte Carlo simulations
Author
Helena Rodilla
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Joel Schleeh
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Per-Åke Nilsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Jan Grahn
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
24th International Conference on Indium Phosphide & Related Materials (IPRM)
1092-8669 (ISSN)
241-244Areas of Advance
Information and Communication Technology
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/ICIPRM.2012.6403368
ISBN
978-146731725-2