Fabrication of novel unipolar nanodiodes in InAs/AlSb for microwave detection
Paper in proceedings, 2011

Abstract—We report on the fabrication of unipolar nanodiodes into an InAs/AlxGa1-xSb quantum-well heterostructure for room temperature microwave detection up to 110 GHz. Electron-beam lithography was combined with both dry- and wet-etching, and we explored the differences in the electric and detection parameters with the two methods.

Author

L.Q.Zhang

University of Manchester

Y.Alimi

University of Manchester

C.Balocco

University of Manchester

Huan Zhao Ternehäll

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Andreas Westlund

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Giuseppe Moschetti

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Per-Åke Nilsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Jan Grahn

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

A.M. Song

University of Manchester

Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on

2162-2027 (ISSN)

2-7 Oct. 2011 1-2

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (2010-2017)

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/irmmw-THz.2011.6104983

ISBN

978-1-4577-0508-3

More information

Latest update

2/28/2018