Fabrication of novel unipolar nanodiodes in InAs/AlSb for microwave detection
Paper in proceeding, 2011
Abstract—We report on the fabrication of unipolar nanodiodes into an InAs/AlxGa1-xSb quantum-well heterostructure for room temperature microwave detection up to 110 GHz. Electron-beam lithography was combined with both dry- and wet-etching, and we explored the differences in the electric and detection parameters with the two methods.
Author
L.Q.Zhang
University of Manchester
Y.Alimi
University of Manchester
C.Balocco
University of Manchester
Huan Zhao Ternehäll
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Andreas Westlund
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Giuseppe Moschetti
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Per-Åke Nilsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Jan Grahn
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
A.M. Song
University of Manchester
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
2162-2027 (ISSN)
2-7 Oct. 2011 1-2978-1-4577-0508-3 (ISBN)
Areas of Advance
Information and Communication Technology
Nanoscience and Nanotechnology
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/irmmw-THz.2011.6104983
ISBN
978-1-4577-0508-3