Source-drain scaling of ion-implanted InAs/AlSb HEMTs
Paper in proceedings, 2012

We report on the lateral scaling of true planar InAs/AlSb high electron mobility transistors (HEMTs) based on ion implantation for device isolation. When reducing the source drain distance, dsd, from 2.5 μm to 1 μm, the HEMTs showed up to 56% higher maximum drain current, 23% higher peak transconductance and T of 185 GHz (+32%). A trade-off in the lateral scaling is needed due to increased gate leakage current and pinch-off degradation for dsd below 1.5 μm. The ability to withstand oxidation of the InAs/AlSb heterostructure makes the planar technology based on ion implantation extremely promising for MMIC integration of InAs/AlSb HEMTs.

low-power

MMIC

InAs/AlSb HEMT

ion implantation

oxidation resistant

lateral scaling

Author

Giuseppe Moschetti

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Per-Åke Nilsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

A. Hallen

Royal Institute of Technology (KTH)

L. Desplanque

Lille 1 University of Science and Technology

X. Wallart

Lille 1 University of Science and Technology

Jan Grahn

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

1092-8669 (ISSN)

57-60

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/ICIPRM.2012.6403318

ISBN

978-146731725-2

More information

Latest update

5/14/2018