InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation
Journal article, 2011
Microwave
Antimonide
InAs/AlSb
HEMT
Low power
frequency
Cryogenic
Low noise amplifier
Author
Giuseppe Moschetti
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Niklas Wadefalk
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Per-Åke Nilsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Y. Roelens
University of Lille
A. Noudeviwa
University of Lille
L. Desplanque
University of Lille
X. Wallart
University of Lille
F. Danneville
University of Lille
G. Dambrine
University of Lille
S. Bollaert
University of Lille
Jan Grahn
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Solid-State Electronics
0038-1101 (ISSN)
Vol. 64 1 47-53Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1016/j.sse.2011.06.048