Monte carlo analysis of impact ionization in isolated-gate InAs/AlSb high electron mobility transistors
Paper in proceeding, 2011
Author
Beatriz G. Vasallo
University of Salamanca
H. Rodilla
University of Salamanca
T. Gonzalez
University of Salamanca
Eric Lefebvre
OSRAM Opto Semiconductors
Giuseppe Moschetti
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Jan Grahn
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
J. Mateos
University of Salamanca
Acta Physica Polonica A
0587-4246 (ISSN) 1898794x (eISSN)
Vol. 119 2 222-224Semiconductor Nanodevices for Room temperature THz Emission and Detection (ROOTHz)
European Commission (EC) (EC/FP7/243845), 2010-01-01 -- 2013-01-31.
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.12693/APhysPolA.119.222