Monte carlo analysis of impact ionization in isolated-gate InAs/AlSb high electron mobility transistors
Paper in proceedings, 2011

We perform a physical analysis of the kink effect in InAs/AlSb high electron mobility transistors by means of a semiclassical 2D ensemble Monte Carlo simulator. Due to the small bandgap of InAs, InAs/AlSb high electron mobility transistors are very susceptible to suffer from impact ionization processes, with the subsequent hole transport through the structure, both implicated in the kink effect. When the drain-to-source voltage VDS is high enough for the onset of impact ionization, holes generated tend to pile up at the gate-drain side of the buffer. This occurs due to the valence-band energy barrier between the buffer and the channel. Because of this accumulation of positive charge, the channel is further opened and the drain current I D increases, leading to the kink effect in the I-V characteristics.

Author

Beatriz G. Vasallo

University of Salamanca

H. Rodilla

University of Salamanca

T. Gonzalez

University of Salamanca

Eric Lefebvre

OSRAM Opto Semiconductors

Giuseppe Moschetti

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Jan Grahn

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

J. Mateos

University of Salamanca

Acta Physica Polonica A

0587-4246 (ISSN)

Vol. 119 2 222-224

Semiconductor Nanodevices for Room temperature THz Emission and Detection (ROOTHz)

European Commission (FP7), 2010-01-01 -- 2013-01-31.

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

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