Room temperature THz detection and emission with semiconductor nanodevices
Paper in proceedings, 2013

In this paper we present the advances on the fabrication of THz emitters and detectors obtained within the framework of the European ROOTHz project. Two types of devices are explored, self-switching diodes and slot-diodes, using both narrow bandgap and wide bandgap semiconductors. This broad approach allows us to improve the frequency and power generated by Gunn diodes and the responsivity and noise of detectors at THz frequencies.

Gunn oscillations

Monte Carlo simulation

THz devices

nanodevices

Author

J. Mateos

University of Salamanca

Jean François Millithaler

University of Salamanca

Ignacio Íñiguez-De-La-Torre

University of Salamanca

Ana Íñiguez-De-La Torre

University of Salamanca

Beatriz G. Vasallo

University of Salamanca

Susana Muñoz Pérez

University of Salamanca

T. Gonzalez

University of Salamanca

Paul Sangaré

IEMN Institut d'Electronique de Microelectronique et de Nanotechnologie

Guillaume Ducournau

IEMN Institut d'Electronique de Microelectronique et de Nanotechnologie

Christophe Gaquière

IEMN Institut d'Electronique de Microelectronique et de Nanotechnologie

Y.Alimi

University of Manchester

L.Q.Zhang

University of Manchester

Ali A. Rezazadeh

University of Manchester

A.M. Song

University of Manchester

Andreas Westlund

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Jan Grahn

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013

215-218

Subject Categories

Nano Technology

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/CDE.2013.6481381

ISBN

9781467346689

More information

Latest update

9/3/2018 1