Room temperature THz detection and emission with semiconductor nanodevices
Paper i proceeding, 2013

In this paper we present the advances on the fabrication of THz emitters and detectors obtained within the framework of the European ROOTHz project. Two types of devices are explored, self-switching diodes and slot-diodes, using both narrow bandgap and wide bandgap semiconductors. This broad approach allows us to improve the frequency and power generated by Gunn diodes and the responsivity and noise of detectors at THz frequencies.

THz devices

Monte Carlo simulation

nanodevices

Gunn oscillations

Författare

J. Mateos

Universidad de Salamanca

Jean François Millithaler

Universidad de Salamanca

Ignacio Íñiguez-De-La-Torre

Universidad de Salamanca

Ana Íñiguez-De-La Torre

Universidad de Salamanca

Beatriz G. Vasallo

Universidad de Salamanca

Susana Muñoz Pérez

Universidad de Salamanca

T. Gonzalez

Universidad de Salamanca

Paul Sangaré

IEMN Institut d'Electronique de Microelectronique et de Nanotechnologie

Guillaume Ducournau

IEMN Institut d'Electronique de Microelectronique et de Nanotechnologie

Christophe Gaquière

IEMN Institut d'Electronique de Microelectronique et de Nanotechnologie

Y.Alimi

University of Manchester

L.Q.Zhang

University of Manchester

Ali A. Rezazadeh

University of Manchester

A.M. Song

University of Manchester

Andreas Westlund

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Jan Grahn

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013

215-218

Ämneskategorier

Nanoteknik

Annan elektroteknik och elektronik

DOI

10.1109/CDE.2013.6481381

ISBN

9781467346689