Band-reconfigurable LDMOS power amplifier
Paper in proceedings, 2010

A band-reconfigurable LDMOS high power amplifier (PA) with state-of-the-art performance is presented. The frequency reconfigurability is implemented by band-switchable matching networks using PIN diodes. The PA provides power-added efficiencies which are higher than 61% and output power levels exceeding 8 W at 0.9 GHz, 1.5 GHz, and 1.9 GHz. The input return loss in all the three bands is better than 12 dB.

Author

Hossein Mashad Nemati

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

GigaHertz Centre

Jan Grahn

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

GigaHertz Centre

Christian Fager

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

GigaHertz Centre

2010 European Microwave Conference

978-981

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

Other Electrical Engineering, Electronic Engineering, Information Engineering

ISBN

978-1-4244-7232-1

More information

Created

10/7/2017