Band-reconfigurable LDMOS power amplifier
Paper i proceeding, 2010

A band-reconfigurable LDMOS high power amplifier (PA) with state-of-the-art performance is presented. The frequency reconfigurability is implemented by band-switchable matching networks using PIN diodes. The PA provides power-added efficiencies which are higher than 61% and output power levels exceeding 8 W at 0.9 GHz, 1.5 GHz, and 1.9 GHz. The input return loss in all the three bands is better than 12 dB.

Författare

Hossein Mashad Nemati

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

GigaHertz Centrum

Jan Grahn

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

GigaHertz Centrum

Christian Fager

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

GigaHertz Centrum

2010 European Microwave Conference

978-981

Ämneskategorier

Elektroteknik och elektronik

Annan elektroteknik och elektronik

ISBN

978-1-4244-7232-1

Mer information

Skapat

2017-10-07