Band-reconfigurable LDMOS power amplifier
Paper i proceeding, 2010
A band-reconfigurable LDMOS high power amplifier (PA) with state-of-the-art performance is presented. The frequency reconfigurability is implemented by band-switchable matching networks using PIN diodes. The PA provides power-added efficiencies which are higher than 61% and output power levels exceeding 8 W at 0.9 GHz, 1.5 GHz, and 1.9 GHz. The input return loss in all the three bands is better than 12 dB.
Författare
Hossein Mashad Nemati
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Gigahertzcentrum
Jan Grahn
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Gigahertzcentrum
Christian Fager
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Gigahertzcentrum
2010 European Microwave Conference
978-981
978-1-4244-7232-1 (ISBN)
Ämneskategorier
Elektroteknik och elektronik
Annan elektroteknik och elektronik
ISBN
978-1-4244-7232-1