Zero-Bias Self-Switching In65Ga35As channel Diodes for Terahertz Detection,
Paper in proceedings, 2015

An alternative to the transistor for high-frequency detector applications is the two-terminal self-switching diode (SSD). The SSD is based on a nanometer-wide channels and a lateral gate connected to a drain. SSDs with In65Ga35As channels were fabricated and characterized. The design was optimized for low noise detection. In on-wafer measurements 2-315 GHz, a responsivity >150 V/W and noise-equivalent power (NEP) 50-100 pW/Hz½ was measured with a 50 Ω source. In the measured frequency range, this is the lowest NEP for SSDs demonstrated.

Self-switching diode

InGaAs

NEP

Author

Andreas Westlund

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Per-Åke Nilsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

P. Sangaré

G. Ducournau

C. Gaquière

Jan Grahn

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

IEEE International Conference on Indium Phosphide and Related Materials Conference Proceedings 2015

Vol. CSW 2015 82-83

Areas of Advance

Information and Communication Technology

Subject Categories

Nano Technology

Infrastructure

Nanofabrication Laboratory

More information

Created

10/7/2017