Highly linear 1-3 GHz GaN HEMT low-noise amplifier
Paper in proceedings, 2012

A highly linear low-noise amplifier (LNA) based on a commercial Gallium Nitride (GaN) high electron mobility transistor (HEMT) technology is presented. The amplifier can be operated at three frequency bands of 1, 2 and 3 GHz. The maximum measured gain is 31 dB at 1GHz and the output referred third-order intercept point (OIP3) is constant for all three frequency bands and equal to 41±1 dBm at a power consumption of L.2 W. A minimum noise figure (NF) of 0.5 dB is measured for the amplifier at the same bias point demonstrating the simultaneous linearity and low noise performance. The presented performance together with the reasonably low power consumption is outstanding in comparison with recently published amplifiers in GaN technology and available commercial GaAs LNAs.

GaN

Linearity

HEMT

Low Power consumption

Low-noise amplifier

High dynamic range

Author

Pirooz Chehrenegar

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

GigaHertz Centre

Morteza Abbasi

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Jan Grahn

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Kristoffer Andersson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

GigaHertz Centre

IEEE MTT-S International Microwave Symposium Digest

0149645X (ISSN)

6259764

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/MWSYM.2012.6259764

ISBN

978-146731087-1

More information

Created

10/7/2017