Highly linear 1-3 GHz GaN HEMT low-noise amplifier
Paper in proceeding, 2012
GaN
Linearity
HEMT
Low Power consumption
Low-noise amplifier
High dynamic range
Author
Pirooz Chehrenegar
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
GigaHertz Centre
Morteza Abbasi
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Jan Grahn
GigaHertz Centre
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Kristoffer Andersson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
GigaHertz Centre
IEEE MTT-S International Microwave Symposium Digest
0149645X (ISSN)
6259764978-146731087-1 (ISBN)
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/MWSYM.2012.6259764
ISBN
978-146731087-1