Optimization of narrow bandgap HEMTs for low-noise and low-power applications
Doctoral thesis, 2008

Kollektorn (A423) MC2, Kemivägen 9, Chalmers, Göteborg
Opponent: Prof. Colombo Bolognesi, ETH Zürich

Author

Mikael Malmkvist

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Characterization of insulated-gate versus Schottky-gate InAs/AlSb HEMTs

Proc. European Microwave Integrated Circuit Conference (EuMIC),; (2007)p. pp. 24-27

Paper in proceedings

Epitaxial optimization of 130-nm gate-length InGaAs/InAlAs HEMTs for high-frequency applications

IEEE Transactions on Electron Devices,; Vol. 55(2008)p. pp. 268-275

Journal article

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

ISBN

978-91-7385-059-9

Technical report MC2 - Department of Microtechnology and Nanoscience, Chalmers University of Technology: 111

Doktorsavhandlingar vid Chalmers tekniska högskola. Ny serie: 2740

Kollektorn (A423) MC2, Kemivägen 9, Chalmers, Göteborg

Opponent: Prof. Colombo Bolognesi, ETH Zürich

More information

Created

10/8/2017