Optimization of narrow bandgap HEMTs for low-noise and low-power applications
Doctoral thesis, 2008
Kollektorn (A423) MC2, Kemivägen 9, Chalmers, Göteborg
Opponent: Prof. Colombo Bolognesi, ETH Zürich
Author
Mikael Malmkvist
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
W-band MMIC amplifier using pseudomorphic InP HEMT wiht sub 100-nm gate length
Gigahertz 2005,;(2005)
Other conference contribution
Integration of components in a 50-nm pseudomorphic In0.65Ga0.35As-In0.40Al0.60As-InP HEMT MMIC technology
Solid State Electronics,;Vol. 50(2006)p. 858-864
Journal article
Characterization of insulated-gate versus Schottky-gate InAs/AlSb HEMTs
Proc. European Microwave Integrated Circuit Conference (EuMIC),;(2007)p. pp. 24-27
Paper in proceeding
Epitaxial optimization of 130-nm gate-length InGaAs/InAlAs HEMTs for high-frequency applications
IEEE Transactions on Electron Devices,;Vol. 55(2008)p. pp. 268-275
Journal article
Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering
ISBN
978-91-7385-059-9
Technical report MC2 - Department of Microtechnology and Nanoscience, Chalmers University of Technology: 111
Doktorsavhandlingar vid Chalmers tekniska högskola. Ny serie: 2740
Kollektorn (A423) MC2, Kemivägen 9, Chalmers, Göteborg
Opponent: Prof. Colombo Bolognesi, ETH Zürich