Optimization of narrow bandgap HEMTs for low-noise and low-power applications
Doktorsavhandling, 2008

Kollektorn (A423) MC2, Kemivägen 9, Chalmers, Göteborg
Opponent: Prof. Colombo Bolognesi, ETH Zürich

Författare

Mikael Malmkvist

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

W-band MMIC amplifier using pseudomorphic InP HEMT wiht sub 100-nm gate length

Gigahertz 2005,; (2005)

Konferensbidrag (offentliggjort, men ej förlagsutgivet)

Integration of components in a 50-nm pseudomorphic In0.65Ga0.35As-In0.40Al0.60As-InP HEMT MMIC technology

Solid State Electronics,; Vol. 50(2006)p. 858-864

Artikel i vetenskaplig tidskrift

Characterization of insulated-gate versus Schottky-gate InAs/AlSb HEMTs

Proc. European Microwave Integrated Circuit Conference (EuMIC),; (2007)p. pp. 24-27

Paper i proceeding

Epitaxial optimization of 130-nm gate-length InGaAs/InAlAs HEMTs for high-frequency applications

IEEE Transactions on Electron Devices,; Vol. 55(2008)p. pp. 268-275

Artikel i vetenskaplig tidskrift

Ämneskategorier

Annan elektroteknik och elektronik

ISBN

978-91-7385-059-9

Technical report MC2 - Department of Microtechnology and Nanoscience, Chalmers University of Technology: 111

Doktorsavhandlingar vid Chalmers tekniska högskola. Ny serie: 2740

Kollektorn (A423) MC2, Kemivägen 9, Chalmers, Göteborg

Opponent: Prof. Colombo Bolognesi, ETH Zürich

Mer information

Skapat

2017-10-08