Electron capture cross sections of InAs/GaAs quantum dots
Journal article, 2004

The thermal emission rates of electrons from InAs/GaAs quantum dots were measured, to found the capture cross sections in the extremely high region of 10-11-10-10 cm2. An additional method based on a static measurement at thermal equilibrium was used where the Fermi level was positioned at the free energy level of the quantum dot s shell. A Schottky diode with a plane of QDs grown in its depletion region and back-biased in such a way that the Fermi level coincides with the electron energy level. The Fermi level passes the lowest energy level of the QD, at the voltage marked by Vp in the graphs.


Olof Engström

Chalmers, Microtechnology and Nanoscience (MC2), Solid State Electronics

M. Kaniewska

Instytut Technologii Elektronowej (ITE)

Ying Fu

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Johan Piscator

Chalmers, Microtechnology and Nanoscience (MC2), Solid State Electronics

Mikael Malmkvist

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 85 14 2908-2910

Subject Categories

Physical Sciences



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9/6/2018 2