Ying Fu

Showing 29 publications

2010

Effects of quantum dot labeling on endothelial progenitor cell function and viability

Mátyás Molnár, Peter Friberg, Ying Fu et al
Cell Medicine, Part B of Cell Transplantation. Vol. 1, p. 105-112
Journal article
2007

Structural analysis of dilute nitride zincblend InGaNAs cluster by a semi-empirical quantum chemistry study

T.T. Han, Ying Fu, Shu Min Wang et al
Journal of Applied Physics. Vol. 101, p. 123707-
Journal article
2006

Energy band structure and spectral gain characteristics of dilute-nitride zinc blende InGaNAs quantum wells embedded in GaAs and GaNAs barriers

Ying Fu, Yongqiang Wei, X. D. Wang et al
Journal of Applied Physics. Vol. 100 (7)
Journal article
2006

Electron wave packet transmission through a Si quantum wire under the influence of an ionized impurity scattering potential

Ying Fu, Olof Engström
Journal of Nanoelectronics and Optoelectronics. Vol. 1, p. 108-
Journal article
2006

Conductive adhesives

Ying Fu
Lead free electronics, IEEE Press, Wiley Interscience, A John Wiley & Sons Inc. Publication, USA
Book chapter
2005

Photocurrent spectroscopy on self-assembled InAs quantum dots embedded in InP

H. Pettersson, L. Landin, Ying Fu et al
Microelectronics. Vol. 36 (3-6), p. 227-230
Journal article
2005

Entropy associated with electron emission from InAs/GaAs quantum dots

Olof Engström, Ying Fu, Ali Eghtedari
Physica E. Vol. 27, p. 380-
Journal article
2005

6. Direct Comparison of Threshold and Gain Characteristics of 1300 nm GaInNAs lasers with GaNAs and GaAs Barriers

Yongqiang Wei, Ying Fu, Xiaodong Wang et al
APPLIED PHYSICS LETTERS. Vol. 87 (8), p. 081102-
Magazine article
2005

Detection wavelengths and photocurrents of very long wavelength quantum-well infrared photodetectors

N. Li, F. Guo, H. Zhen et al
Infrared Physics and Technology. Vol. 47 (1-2), p. 29-36
Journal article
2005

Direct Comparison of Threshold and Gain Characteristics of 1300 nm GaInNAs lasers with GaNAs and GaAs Barriers

Yongqiang Wei, Ying Fu, Xiaodong Wang et al
CLEO-/EUROPE-EQEC 2005, Muchen, Germany
Paper in proceedings
2004

Wave packet transmission in a ZnO nanorod under the influence of repulsive/attractive scattering center

Ying Fu, Qiu-Hong Hu, Magnus Willander
Journal of Nanoscience and Nanotechnology. Vol. 4 (1-2), p. 91-3
Journal article
2004

Electron conduction through nano particles in electrically conductive adhesives

Ying Fu, Johan Liu
Micromaterials and Nanomaterials. Vol. 3, p. 104-109
Journal article
2004

Emission rates for electron tunneling from InAs quantum dots to GaAs substrate

Ying Fu, Olof Engström, Y Luo
Journal of Applied Physics. Vol. 96 (11), p. 6477-6481
Journal article
2004

Quantum well infrared detectors

Ying Fu, W Lu
Encyclopedia of Nanoscience and Nanotechnology, ed. by H.S. Nalwa. Vol. 9, p. 179-97
Book chapter
2004

Conductive adhesives

Ying Fu, Johan Liu, Magnus Willander
Lead free electronics, p. pp 285-351
Book chapter
2004

Photoluminescence spectra of doped GaAs films

Ying Fu, Magnus Willander, G.B Chen et al
Applied Physics A: Materials Science and Processing. Vol. 79 (3), p. 619-623
Journal article
2004

Electron conduction through nano particles in electrically conductive adhesives

Ying Fu, Johan Liu
Micromaterials and Nanomaterials. Vol. 3, p. 104-
Magazine article
2004

Peak response wavelenghts of p-and n-type InGaAs-InP quantum well infrared photodetectors

Ying Fu, Magnus Willander, D.K. Sengupta
Applied Physics A. Vol. 80, p. 523-8
Journal article
2004

Semiconductor nanotransistors

Ying Fu
Encyclopedia of Nanoscience, ed. by H.S. Nalwa. Vol. 9, p. 697-718
Book chapter
2004

Electron capture cross sections of InAs/GaAs quantum dots

Olof Engström, M. Kaniewska, Ying Fu et al
Applied Physics Letters. Vol. 85 (14), p. 2908-2910
Journal article
2003

Thermal emission of electrons from selected s shell configurations in InAs/GaAs quantum dots

Olof Engström, Mikael Malmkvist, Ying Fu et al
Applied Physics Letters. Vol. 83, p. 3578-
Journal article
2003

Selected thermal emission of electrons from different configurations in InAs/GaAs quantum dots

Olof Engström, Mikael Malmkvist, Ying Fu et al
International Conference on Trends in Nanotechnology, Salamanca, Spain
Paper in proceedings
2003

Thermal emission of electrons from selected s shell configurations in InAs/GaAs quantum dots

Mikael Malmkvist, Ying Fu, Halldor Olafsson et al
Applid Physics Letters. Vol. 85, p. 3578-
Journal article
2001

Leakage current and capacitance characteristics of Si/SiO2/Si single-barrier varactor

Mamor Mamor, Ying Fu, Omer Nur et al
Applied Physics A-Materials Science & Processing. Vol. 72 (5), p. 633-637
Journal article
2000

Carrier conduction through the quantum barrier in a heterostructure barrier varactor Induced by an AC-Bias

Ying Fu, Magnus Willander, Jan Stake et al
Superlattices and Microstructures. Vol. 28 (2), p. 135-141
Journal article
2000

n-Si/SiO2/Si heterostructure barrier varactor diode design

Ying Fu, Mamor Mamor, Magnus Willander et al
Applied Physics Letters. Vol. 77 (1), p. 103-105
Journal article
1998

Capacitance Analysis for AlGaAs/GaAs and InAlAs/InGaAs Heterostructure Barrier Varactor Diodes

Ying Fu, Lars Dillner, Jan Stake et al
Journal of Applied Physics. Vol. 83 (3), p. 1457-1462
Journal article
1997

Modeling of the Heterostructure Barrier Varactor

Lars Dillner, Fariba Ferdos, Jan Stake et al
GigaHertz 97, p. 100-101
Paper in proceedings
1997

AlGaAs/GaAs and InAlAs/InGaAs Heterostructure Barrier Varactors

Ying Fu, Jan Stake, Lars Dillner et al
Journal of Applied Physics. Vol. 82 (11), p. 5568-5572
Journal article

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