Capacitance Analysis for AlGaAs/GaAs and InAlAs/InGaAs Heterostructure Barrier Varactor Diodes
Journal article, 1998

By self-consistently solving Schro┬Ędinger and Poissons equations, we have investigated the capacitances of AlGaAs/GaAs and InAlAs/InGaAs heterostructure barrier varactors. When compared with semiclassical particle model, quantum mechanics show that the maximal capacitance of the varactor is saturated when the spacer and barrier are thin. When the spacer and barrier are very thick, both the quantum mechanics and semiconductor particle approach result in the same conclusion, namely, the maximal capacitance is inversely proportional to the sum of the spacer and barrier thicknesses. We have also shown that the maximal capacitance increases for high carrier effective mass.




Ying Fu

Chalmers, Physical Electronics and Photonics

Lars Dillner

Department of Microwave Technology

Jan Stake

Department of Microwave Technology

Magnus Willander

Chalmers, Physical Electronics and Photonics

Erik Kollberg

Department of Microwave Technology

Journal of Applied Physics

0021-8979 (ISSN) 1089-7550 (eISSN)

Vol. 83 3 1457-1462

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (SO 2010-2017, EI 2018-)

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

Condensed Matter Physics



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