AlGaAs/GaAs and InAlAs/InGaAs Heterostructure Barrier Varactors
Journal article, 1997

By the Schrödinger and Poisson equations, we have theoretically investigated AlGaAs/GaAs and InAlAs/InGaAs single barrier varactors. The energy band structure, carrier distribution, and conduction current are fully exploited for varactor design. We have explained the experimental current-voltage and capacitance-voltage measurements very well. A simple analytical model for energy band structure is derived based on the Schrödinger and Poisson equation calculation. It is found that a barrier structure of 3 nm Al0.3Ga0.7As/3 nm AlAs/3nm Al0.3Ga0.7As for an Al0.3Ga0.7As/GaAs varactor and a barrier structure of 8 nm In0.52Al0.48As/3 nm AlAs/8 nm In0.52Al0.48As for In0.52Al0.48As/In0.47GaAs are optimal for minimal conduction currents.

physical simulation

frequency multiplier



Ying Fu

Chalmers, Physical Electronics and Photonics

Jan Stake

Department of Microwave Technology

Lars Dillner

Department of Microwave Technology

Magnus Willander

Chalmers, Physical Electronics and Photonics

Erik Kollberg

Department of Microwave Technology

Journal of Applied Physics

0021-8979 (ISSN) 1089-7550 (eISSN)

Vol. 82 11 5568-5572

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

Condensed Matter Physics



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