Johan Piscator
Showing 30 publications
2011
Characterization of Traps in the Transition Region at the HfO2/SiOx Interface by Thermally Stimulated Currents
Bahman Raeissi, Johan Piscator, Y. Y. Chen et al
Journal of the Electrochemical Society. Vol. 158 (3), p. G63-G70
Journal article
2011
Hole emission mechanism in Ge/Si quantum dots
M. Kaniewska, Olof Engström, A. Karmous et al
Physica Status Solidi (C) Current Topics in Solid State Physics. Vol. 8 (2), p. 411 -413
Journal article
2011
Spatial variarion of hole eigen energies in Ge/Si quantum wells
M. Kaniewska, Olof Engström, A. Karmous et al
AIP Conference Proceedings. Vol. 1399, p. 293-294
Paper in proceedings
2010
Spatial variations of hole eigen energies in Ge/Si quantum wells
M Kaniewska, Olof Engström, A Karmous et al
30th International Conference on the Physics of Semiconductors, Seoul, July 25 - 30, 2010
Paper in proceedings
2010
Multiparameter Admittance Spectroscopy as a Diagnostic Tool for Interface States at Oxide/Semiconductor Interfaces
Bahman Raeissi, Johan Piscator, Olof Engström
IEEE Transactions on Electron Devices. Vol. 57 (7), p. 1702-1705
Journal article
2010
Charging Phenomena at the Interface Between High-k Dielectrics and SiOx Interlayers (Invited)
Olof Engström, Bahman Raeissi, Johan Piscator et al
Journal of Telecommunications and Information Technology. Vol. 1, p. 10-
Journal article
2009
Influence of Electron Charge States in Nanoelectronic Building Blocks
Johan Piscator
Doctoral thesis
2009
The conductance method in a bottom-up approach applied on hafnium oxide/silicon interfaces
Johan Piscator, Bahman Raeissi, Olof Engström
Applied Physics Letters. Vol. 94 (21), p. 213507-
Journal article
2009
Multiparameter admittance spectroscopy for metal-oxide-semiconductor systems
Johan Piscator, Bahman Raeissi, Olof Engström
Journal of Applied Physics. Vol. 106 (5), p. 054510-
Journal article
2009
Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics
H. D. B. Gottlob, M. Schmidt, M Schmidt et al
Microelectronic Engineering. Vol. 86 (7-9), p. 1642-1645
Journal article
2009
Comprehensive study of InAs/GaAs quantum dots by means of complementary methods
M Kaczmarczyk, M Kaniewska, Johan Piscator et al
Materials Science & Engineering B: Solid-State Materials for Advanced Technology. Vol. 165 (1-2), p. 98-102
Paper in proceedings
2009
Charging phenomena at the interface between high-k dielectrics and SiOx interlayers
Olof Engström, Bahman Raeissi, Johan Piscator et al
8th Symposium Diagnostics & Yield Advanced Silicon Devices and Technologies for the ULSI Era, Warsaw, June 22 - 24, 2009 (Invited)
Paper in proceedings
2008
Vibronic nature of hafnium oxide/silicon interface states investigated by capacitance frequency spectroscopy
Olof Engström, Bahman Raeissi, Johan Piscator
Journal of Applied Physics. Vol. 103 (10), p. Art. no. 104101-
Journal article
2008
Gd silicate: A high-k dielectric compatible with high temperature annealing
H.D.B. Gottlob, M Schmidt, M.C. Lemme et al
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. Vol. 27 (1), p. 249-252
Journal article
2008
Interface Defects in HfO2, LaSiOx, and Gd2O3 High-k/MetalGate Structures on Silicon
P.K. Hurley, K. Cherkaoui, E O'Connor et al
J. Electrochem. Soc.. Vol. 155 (2), p. G13-G20
Journal article
2008
Schottky barriers on silicon nanowires influenced by charge configuration
Johan Piscator, Olof Engström
Journal of Applied Physics. Vol. 104 (5), p. 054515-
Journal article
2008
Multiphonon capture of electrons at high-k-silicon interfaces
Olof Engström, Bahman Raeissi, Johan Piscator
Gordon Conference, New London, New Hampshire, August, 2008
Paper in proceedings
2008
A generalised methodology for oxide leakage current metric
Olof Engström, Johan Piscator, Bahman Raeissi et al
Proceeding of 9th European Workshop on Ultimate Integration of Silicon (ULIS), Udine, Italy, p. 167-
Paper in proceedings
2008
Electron traps at HfO2/SiOx interfaces
Bahman Raeissi, Yang Yin Chen, Johan Piscator et al
Proceeding of 38th European Solid-State Device Research Conference (ESSDERC 2008), Edinburgh, Scotland, UK, p. 130-133
Paper in proceedings
2008
High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy
Bahman Raeissi, Johan Piscator, Olof Engström et al
Solid-State Electronics. Vol. 52 (9), p. 1274-1279
Journal article
2008
A new mechanism for modulation of Schottky barrier heights on silicon nanowires
Johan Piscator, Olof Engström
Physica E: Low-Dimensional Systems and Nanostructures. Vol. 40 (7), p. 2508-2512
Journal article
2008
Comprehensive study of InAs/GaAs quantum dots by means of complementary methods
M Kaczmarczyk, Olof Engström, Johan Piscator et al
9th Exmatec, Lodz, June 2008
Paper in proceedings
2007
High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy
Bahman Raeissi, Johan Piscator, Olof Engström et al
ESSDERC 2007 - 37th European Solid-State Device Research Conference; Munich; Germany; 11 September 2007 through 13 September 2007, p. 283-286
Paper in proceedings
2007
Schottky barrier modulation on silicon nanowires
Johan Piscator, Olof Engström
Applied Physics Letters. Vol. 90, p. 132197-1
Journal article
2007
A new mechanism for modulation of Schottky barrier heights on silicon nanowires
Johan Piscator, Olof Engström
European Materials research Society Meeting, Strasbourg, May 2007
Paper in proceedings
2007
Interface defects in HfO2, LaSiOx and Gd2O3 high-k/metal gate structures on silicon: Energy distribution and passivation
P.K. Hurley, K. Cherkaoui, E O'Connor et al
Proc. Electrochemical Society Meeting, Washington DC, October 2007
Paper in proceedings
2007
Schottky barrier lowering on silicon nanowires by introduction of positive charge
Johan Piscator, Olof Engström
ICON 2007 Proceedings booklet: The Second International Conference on One-dimensional Nanomaterials
Paper in proceedings
2005
Applications of SOI materials to quantum devices and Microsystems
Johan Piscator, Alexandra Nafari, Martin Bring et al
EUROSOI-2005
Paper in proceedings
2004
Electron capture cross sections of InAs/GaAs quantum dots
Olof Engström, M. Kaniewska, Ying Fu et al
Applied Physics Letters. Vol. 85 (14), p. 2908-2910
Journal article
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