Johan Piscator

Publications (30)
Projects (0)

Showing 30 publications

2011

Characterization of Traps in the Transition Region at the HfO2/SiOx Interface by Thermally Stimulated Currents

Bahman Raeissi, Johan Piscator, Y. Y. Chen et al

Journal of the Electrochemical Society. Vol. 158 (3), p. G63-G70

Journal article

2011

Hole emission mechanism in Ge/Si quantum dots

M. Kaniewska, Olof Engström, A. Karmous et al

Physica Status Solidi (C) Current Topics in Solid State Physics. Vol. 8 (2), p. 411 -413

Journal article

2011

Spatial variarion of hole eigen energies in Ge/Si quantum wells

M. Kaniewska, Olof Engström, A. Karmous et al

AIP Conference Proceedings. Vol. 1399, p. 293-294

Paper in proceeding

2010

Charging Phenomena at the Interface Between High-k Dielectrics and SiOx Interlayers (Invited)

Olof Engström, Bahman Raeissi, Johan Piscator et al

Journal of Telecommunications and Information Technology. Vol. 1, p. 10-

Journal article

2010

Multiparameter Admittance Spectroscopy as a Diagnostic Tool for Interface States at Oxide/Semiconductor Interfaces

Bahman Raeissi, Johan Piscator, Olof Engström

IEEE Transactions on Electron Devices. Vol. 57 (7), p. 1702-1705

Journal article

2010

Spatial variations of hole eigen energies in Ge/Si quantum wells

M Kaniewska, Olof Engström, A Karmous et al

30th International Conference on the Physics of Semiconductors, Seoul, July 25 - 30, 2010

Paper in proceeding

2009

The conductance method in a bottom-up approach applied on hafnium oxide/silicon interfaces

Johan Piscator, Bahman Raeissi, Olof Engström

Applied Physics Letters. Vol. 94 (21), p. 213507-

Journal article

2009

Multiparameter admittance spectroscopy for metal-oxide-semiconductor systems

Johan Piscator, Bahman Raeissi, Olof Engström

Journal of Applied Physics. Vol. 106 (5), p. 054510-

Journal article

2009

Influence of Electron Charge States in Nanoelectronic Building Blocks

Johan Piscator

Doctoral thesis

2009

Comprehensive study of InAs/GaAs quantum dots by means of complementary methods

M Kaczmarczyk, M Kaniewska, Johan Piscator et al

Materials Science & Engineering B: Solid-State Materials for Advanced Technology. Vol. 165 (1-2), p. 98-102

Paper in proceeding

2009

Charging phenomena at the interface between high-k dielectrics and SiOx interlayers

Olof Engström, Bahman Raeissi, Johan Piscator et al

8th Symposium Diagnostics & Yield Advanced Silicon Devices and Technologies for the ULSI Era, Warsaw, June 22 - 24, 2009 (Invited)

Paper in proceeding

2009

Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics

H. D. B. Gottlob, M. Schmidt, M Schmidt et al

Microelectronic Engineering. Vol. 86 (7-9), p. 1642-1645

Journal article

2008

Comprehensive study of InAs/GaAs quantum dots by means of complementary methods

M Kaczmarczyk, Olof Engström, Johan Piscator et al

9th Exmatec, Lodz, June 2008

Paper in proceeding

2008

Interface Defects in HfO2, LaSiOx, and Gd2O3 High-k/MetalGate Structures on Silicon

P.K. Hurley, K. Cherkaoui, E O'Connor et al

J. Electrochem. Soc.. Vol. 155 (2), p. G13-G20

Journal article

2008

High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy

Bahman Raeissi, Johan Piscator, Olof Engström et al

Solid-State Electronics. Vol. 52 (9), p. 1274-1279

Journal article

2008

Schottky barriers on silicon nanowires influenced by charge configuration

Johan Piscator, Olof Engström

Journal of Applied Physics. Vol. 104 (5), p. 054515-

Journal article

2008

A new mechanism for modulation of Schottky barrier heights on silicon nanowires

Johan Piscator, Olof Engström

Physica E: Low-Dimensional Systems and Nanostructures. Vol. 40 (7), p. 2508-2512

Journal article

2008

Multiphonon capture of electrons at high-k-silicon interfaces

Olof Engström, Bahman Raeissi, Johan Piscator

Gordon Conference, New London, New Hampshire, August, 2008

Paper in proceeding

2008

Vibronic nature of hafnium oxide/silicon interface states investigated by capacitance frequency spectroscopy

Olof Engström, Bahman Raeissi, Johan Piscator

Journal of Applied Physics. Vol. 103 (10), p. Art. no. 104101-

Journal article

2008

Gd silicate: A high-k dielectric compatible with high temperature annealing

H.D.B. Gottlob, M Schmidt, M.C. Lemme et al

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. Vol. 27 (1), p. 249-252

Journal article

2008

A generalised methodology for oxide leakage current metric

Olof Engström, Johan Piscator, Bahman Raeissi et al

Proceeding of 9th European Workshop on Ultimate Integration of Silicon (ULIS), Udine, Italy, p. 167-

Paper in proceeding

2008

Electron traps at HfO2/SiOx interfaces

Bahman Raeissi, Yang Yin Chen, Johan Piscator et al

Proceeding of 38th European Solid-State Device Research Conference (ESSDERC 2008), Edinburgh, Scotland, UK, p. 130-133

Paper in proceeding

2007

Schottky barrier modulation on silicon nanowires

Johan Piscator, Olof Engström

Applied Physics Letters. Vol. 90, p. 132197-1

Journal article

2007

Interface defects in HfO2, LaSiOx and Gd2O3 high-k/metal gate structures on silicon: Energy distribution and passivation

P.K. Hurley, K. Cherkaoui, E O'Connor et al

Proc. Electrochemical Society Meeting, Washington DC, October 2007

Paper in proceeding

2007

A new mechanism for modulation of Schottky barrier heights on silicon nanowires

Johan Piscator, Olof Engström

European Materials research Society Meeting, Strasbourg, May 2007

Paper in proceeding

2007

Schottky barrier lowering on silicon nanowires by introduction of positive charge

Johan Piscator, Olof Engström

ICON 2007 Proceedings booklet: The Second International Conference on One-dimensional Nanomaterials

Paper in proceeding

2007

Schottky Contacs on Silicon Nanowires

Johan Piscator

Licentiate thesis

2007

High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy

Bahman Raeissi, Johan Piscator, Olof Engström et al

ESSDERC 2007 - 37th European Solid-State Device Research Conference; Munich; Germany; 11 September 2007 through 13 September 2007. Vol. 2007, p. 283-286

Paper in proceeding

2005

Applications of SOI materials to quantum devices and Microsystems

Johan Piscator, Alexandra Nafari, Martin Bring et al

EUROSOI-2005

Paper in proceeding

2004

Electron capture cross sections of InAs/GaAs quantum dots

Olof Engström, M. Kaniewska, Ying Fu et al

Applied Physics Letters. Vol. 85 (14), p. 2908-2910

Journal article

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