Johan Piscator

Showing 30 publications

2011

Characterization of Traps in the Transition Region at the HfO2/SiOx Interface by Thermally Stimulated Currents

Bahman Raeissi, Johan Piscator, Y. Y. Chen et al
Journal of the Electrochemical Society. Vol. 158 (3), p. G63-G70
Journal article
2011

Hole emission mechanism in Ge/Si quantum dots

M. Kaniewska, Olof Engström, A. Karmous et al
Physica Status Solidi (C) Current Topics in Solid State Physics. Vol. 8 (2), p. 411 -413
Journal article
2011

Spatial variarion of hole eigen energies in Ge/Si quantum wells

M. Kaniewska, Olof Engström, A. Karmous et al
AIP Conference Proceedings. Vol. 1399, p. 293-294
Paper in proceedings
2010

Spatial variations of hole eigen energies in Ge/Si quantum wells

M Kaniewska, Olof Engström, A Karmous et al
30th International Conference on the Physics of Semiconductors, Seoul, July 25 - 30, 2010
Paper in proceedings
2010

Multiparameter Admittance Spectroscopy as a Diagnostic Tool for Interface States at Oxide/Semiconductor Interfaces

Bahman Raeissi, Johan Piscator, Olof Engström
IEEE Transactions on Electron Devices. Vol. 57 (7), p. 1702-1705
Journal article
2010

Charging Phenomena at the Interface Between High-k Dielectrics and SiOx Interlayers (Invited)

Olof Engström, Bahman Raeissi, Johan Piscator et al
Journal of Telecommunications and Information Technology. Vol. 1, p. 10-
Journal article
2009

The conductance method in a bottom-up approach applied on hafnium oxide/silicon interfaces

Johan Piscator, Bahman Raeissi, Olof Engström
Applied Physics Letters. Vol. 94 (21), p. 213507-
Journal article
2009

Multiparameter admittance spectroscopy for metal-oxide-semiconductor systems

Johan Piscator, Bahman Raeissi, Olof Engström
Journal of Applied Physics. Vol. 106 (5), p. 054510-
Journal article
2009

Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics

H. D. B. Gottlob, M. Schmidt, M Schmidt et al
Microelectronic Engineering. Vol. 86 (7-9), p. 1642-1645
Journal article
2009

Comprehensive study of InAs/GaAs quantum dots by means of complementary methods

M Kaczmarczyk, M Kaniewska, Johan Piscator et al
Materials Science & Engineering B: Solid-State Materials for Advanced Technology. Vol. 165 (1-2), p. 98-102
Paper in proceedings
2009

Charging phenomena at the interface between high-k dielectrics and SiOx interlayers

Olof Engström, Bahman Raeissi, Johan Piscator et al
8th Symposium Diagnostics & Yield Advanced Silicon Devices and Technologies for the ULSI Era, Warsaw, June 22 - 24, 2009 (Invited)
Paper in proceedings
2008

Vibronic nature of hafnium oxide/silicon interface states investigated by capacitance frequency spectroscopy

Olof Engström, Bahman Raeissi, Johan Piscator
Journal of Applied Physics. Vol. 103 (10), p. Art. no. 104101-
Journal article
2008

Gd silicate: A high-k dielectric compatible with high temperature annealing

H.D.B. Gottlob, M Schmidt, M.C. Lemme et al
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. Vol. 27 (1), p. 249-252
Journal article
2008

Interface Defects in HfO2, LaSiOx, and Gd2O3 High-k/MetalGate Structures on Silicon

P.K. Hurley, K. Cherkaoui, E O'Connor et al
J. Electrochem. Soc.. Vol. 155 (2), p. G13-G20
Journal article
2008

Schottky barriers on silicon nanowires influenced by charge configuration

Johan Piscator, Olof Engström
Journal of Applied Physics. Vol. 104 (5), p. 054515-
Journal article
2008

Multiphonon capture of electrons at high-k-silicon interfaces

Olof Engström, Bahman Raeissi, Johan Piscator
Gordon Conference, New London, New Hampshire, August, 2008
Paper in proceedings
2008

A generalised methodology for oxide leakage current metric

Olof Engström, Johan Piscator, Bahman Raeissi et al
Proceeding of 9th European Workshop on Ultimate Integration of Silicon (ULIS), Udine, Italy, p. 167-
Paper in proceedings
2008

High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy

Bahman Raeissi, Johan Piscator, Olof Engström et al
Solid-State Electronics. Vol. 52 (9), p. 1274-1279
Journal article
2008

Electron traps at HfO2/SiOx interfaces

Bahman Raeissi, Yang Yin Chen, Johan Piscator et al
Proceeding of 38th European Solid-State Device Research Conference (ESSDERC 2008), Edinburgh, Scotland, UK, p. 130-133
Paper in proceedings
2008

A new mechanism for modulation of Schottky barrier heights on silicon nanowires

Johan Piscator, Olof Engström
Physica E: Low-Dimensional Systems and Nanostructures. Vol. 40 (7), p. 2508-2512
Journal article
2008

Comprehensive study of InAs/GaAs quantum dots by means of complementary methods

M Kaczmarczyk, Olof Engström, Johan Piscator et al
9th Exmatec, Lodz, June 2008
Paper in proceedings
2007

High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy

Bahman Raeissi, Johan Piscator, Olof Engström et al
ESSDERC 2007 - 37th European Solid-State Device Research Conference; Munich; Germany; 11 September 2007 through 13 September 2007, p. 283-286
Paper in proceedings
2007

Schottky barrier modulation on silicon nanowires

Johan Piscator, Olof Engström
Applied Physics Letters. Vol. 90, p. 132197-1
Journal article
2007

A new mechanism for modulation of Schottky barrier heights on silicon nanowires

Johan Piscator, Olof Engström
European Materials research Society Meeting, Strasbourg, May 2007
Paper in proceedings
2007

Schottky Contacs on Silicon Nanowires

Johan Piscator
Licentiate thesis
2007

Interface defects in HfO2, LaSiOx and Gd2O3 high-k/metal gate structures on silicon: Energy distribution and passivation

P.K. Hurley, K. Cherkaoui, E O'Connor et al
Proc. Electrochemical Society Meeting, Washington DC, October 2007
Paper in proceedings
2007

Schottky barrier lowering on silicon nanowires by introduction of positive charge

Johan Piscator, Olof Engström
ICON 2007 Proceedings booklet: The Second International Conference on One-dimensional Nanomaterials
Paper in proceedings
2005

Applications of SOI materials to quantum devices and Microsystems

Johan Piscator, Alexandra Nafari, Martin Bring et al
EUROSOI-2005
Paper in proceedings
2004

Electron capture cross sections of InAs/GaAs quantum dots

Olof Engström, M. Kaniewska, Ying Fu et al
Applied Physics Letters. Vol. 85 (14), p. 2908-2910
Journal article

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